Abstract:InN materials have been attracting a lot of attention for its prominent application in electronic and optical devices,compared with GaN and AlN,InN has smaller effective mass and higher electron drift velocity.However,the growth difficulties due to low growth temperature and lack of lattice-matched substrate restricted the evolution of InN-based devices,more and more efforts are made in efficiently deposit InN films with better quality.InN films were synthesized on the(0001) sapphire substrates at different growth temperatures by metal organic chemical vapor deposition(MOCVD),the growth source materials are trimethylindium(TMI),trimethylgallium(TMG) and ammonia(NH3).The physical properties of the films were characterized by a series of measurements.We fully studied the characteristic of InN films by various methods,such as X-ray diffraction(XRD),atomic force microscope(AFM),X-ray photoelectron spectroscopy(XPS) and Raman measurements.It's well known that the growth temperature is one of the most important parameters in growth of InN films,so in our study,we focus our attention mainly on the effect of growth temperature.It was found that 600 ℃ is a suitable growth temperature for InN films,the suitable temperature can inhibit the surface segregation phenomenon of In on the surface of InN films.But at a lower or higher temperature it will lead to a surface segregation of In on the InN films.The crystalline quality and morphology of the surface for the sample without surface segregation have been improved compared with the samples with surface segregation.In addition,it was also found that the residual strain in InN films increased with increasing growth temperature by Raman analysis,the E2(high) model frequency shift toward high frequency with increasing growth temperature,and this shift is due to the presence of residual thermal strain in the InN film.When the growth temperature is lower,the residual thermal strain came into being due to the different thermal expand coefficient between the epitaxial-film and the sapphire substrate.The residual thermal strain is biaxial strain,which can be expressed as:εxx=(Tg-Tr)(αsub-αfilm),Tg,Tr are the growth and room temperature,αsub,αfilm are the thermal expand coefficient of sapphire substrate and InN film,respectively.The relation between E2(high) model frequency and residual thermal strain can be expressed as:ω=20εxx+479(cm-1),which fit from the result of Raman analysis,where ω is the E2(high) model frequency,and εxx is the residual biaxial thermal strain.

InN Segregation in InGaN Layers Grownby Metalorganic Chemical Vapor Deposition

Estimation of InN Phase Inclusion in InGaN Films Grown by MOVPE

Phase Seperation of InGaN Films Grown by MOCVD

Study on In Segregation in InN Films Grown by Metal-organic Chemical Vapor Deposition

Photoluminescence and Absorption in InGaN Films with InN Segregation

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Investigation of Indium Surface Segregation in InxGa1-xN Films

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy

Investigation of Structural and Optical Anisotropy of M-Plane InN Films Grown on Γ-Lialo2(1 0 0) by Metal Organic Chemical Vapour Deposition

Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer

Dislocation and elastic strain in an InN film characterized by synchrotron radiation X-ray diffraction and Rutherford backscattering/channeling

The High Mobility Inn Film Grown by Mocvd with Gan Buffer Layer

Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In

Optical and Electronic Properties of InGaN Thin Film Layers

Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films

Study of InGaN Films Grown by MOCVD

Probing the Homogeneity of an In-rich InGaN Layer by Nanoscale Cathodoluminescence (conference Presentation)

Theoretical study of InN growth on Mn-stabilized zirconia (111) substrates