Abstract:A small indium flux was used as a surfactant during the growth of gallium nitride films by rf-plasma assisted molecular beam epitaxy. The effects of the indium surfactant on the optical and structural properties of undoped GaN were studied by photoluminescence spectroscopy, high-resolution X-ray diffraction, atomic force microscopy, Rutherford backscattering spectroscopy, and low-frequency noise. Photoluminescence spectra show that GaN thin films grown in the presence of In surfactant exhibit suppressed yellow luminescence compared to films grown under the same experimental conditions but without In surfactant. The X-ray rocking curves demonstrate a 20% decrease in the full width at half maximum value for the films grown with In surfactant. AFM studies show that the root mean squared roughness for films grown with and without In surfactant are 5.86 and 6.99 nm respectively, indicating significant improvement in surface morphology. RES and ion channeling shows the presence of stacking faults and dislocations in GaN grown with In surfactant and stacking faults in GaN grown without In. For the characterization of defect properties in the films we conducted detailed studies of l/f and Generation-Recombination (C-R) noise on our samples. About 65% reduction in the Hooge parameter was observed in the Film grown with In surfactant, indicative of a corresponding reduction in defect states within the material. For f > 500 Hz, G-R noise was the dominating fluctuation process. Detailed characterization of the G-R noise over a wide range of temperatures enabled the determination of the energy levels of the traps responsible for the G-R noise. Three different trap levels were observed using noise measurement technique. For films grown without In surfactant, traps with activation energies 806 meV, 241 meV and 100 meV were observed, whereas for samples grown with In surfactant traps were observed at 666 meV, 208 meV and 90 meV. Such systematic reduction in the energy levels of the traps may arise from the relaxation of strains in the material when grown under the application of In surfactant.

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Effect of Indium Surfactant on the Optical and Structural Properties of MBE-grown GaN

The Effect of Indium Surfactant on the Optoelectronic and Structural Properties of MBE Grown Gallium Nitride

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage

Anomalous Indium Incorporation and Optical Properties of High Indium Content InGaN Grown by MOCVD

Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal–Organic Chemical Vapor Deposition

Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy

Effect of Indium Droplets on Growth of InGaN Film by Molecular Beam Epitaxy

Influence of Indium Interlayer on the Crystal and Optical Properties of InN Grown on Silicon Substrate

Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Investigation of Indium Surface Segregation in InxGa1-xN Films

Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells

Indium-incorporation-induced Transformation of Optical, Photoluminescence and Lasing Properties of InGaN Epilayers

Indium Mole Fraction Effect on the Structural and Optical Properties of Quaternary Alingan Epilayers

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Abnormal InGaN Growth Behavior in Indium-Desorption Regime in Metalorganic Chemical Vapor Deposition

Effects and Mechanisms of in Surfactant on High Al-content AlGaN Grown by Plasma-Assisted Molecular Beam Epitaxy.

Enhanced performance of (112 ̄2) plane p-AlGaN grown with indium surfactant

Growth and Characterization of Self-Assembled Low-Indium Composition Ingan Nanodots by Alternate Admittance of Precursors

Growth of InGaN Films on C-Plane Sapphire Substrates with an AlN Nucleation Layer by Using Metal-Organic Chemical-Vapor Deposition