Abstract:We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic integrated circuits. We find up to 20-30% shorter carrier lifetimes at spatially resolved individual dislocations from both the QD ground and excited states at room temperature using time-resolved cathodoluminescence spectroscopy. These lifetimes are consistent with differences in the intensity measured under steady-state excitation suggesting that trap-assisted recombination limits the minority carrier lifetime, even away from dislocations. Our techniques also reveal the dramatic growth of misfit dislocations in these structures under carrier injection fueled by recombination-enhanced dislocation glide and III-V/Si residual strain. Beyond these direct effects of increased nonradiative recombination, we find the long-range strain field of misfit dislocations deeper in the defect filter layers employed during III-V/Si growth alter the QD growth environment and introduce a crosshatch-like variation in the QD emission color and intensity when the filter layer is positioned close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. Our work presents a more complete picture of the impacts of dislocations relevant for the development of light sources for scalable silicon photonic integrated circuits.

Influence of Dislocations on Indium Diffusion in Semi-Polar InGaN/GaN Heterostructures

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs

Influence of Dislocation Density on Internal Quantum Efficiency of Gan-Based Semiconductors

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Dislocation reduction in sulfur- and germanium-doped indium phosphide single crystals grown by the vertical gradient freeze process: A transient finite-element study

Dislocation Analysis in Homoepitaxial Gainn/Gan Light Emitting Diode Growth

Light Emission Induced by the Indium Distribution in InGaN Nanowires

The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior

Increased light-emission efficiency in disordered InGaN through the correlated reduction of recombination rates

Unlocking the origin of compositional fluctuations in InGaN light emitting diodes

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage

Invalidation of the Acquisition of Internal Quantum Efficiency Using Temperature-Dependent Photoluminescence in InGaN Quantum Wells with High Threading Dislocation Density

Influence of Indium Composition in the Prestrained Ingan Interlayer on the Strain Relaxation of Ingan/Gan Multiple Quantum Wells in Laser Diode Structures

Study of Defect and Spectral Characteristics of Light Emitting Diodes with Multiple InGaN/GaN Quantum Wells on Patterned Sapphire Substrates

Impact of ITO Layer on the Spatial Optical Distribution of Semipolar (20-21) InGaN/GaN Multiple Quantum Wells with Surface Morphology.

Cathodoluminescence Study on the Impurity Behaviors at Threading Dislocations in GaN

Dislocation Analysis of InGaN/GaN Quantum Dots Grown by Metal Organic Chemical Vapor Deposition

Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon