Abstract:We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic integrated circuits. We find up to 20-30% shorter carrier lifetimes at spatially resolved individual dislocations from both the QD ground and excited states at room temperature using time-resolved cathodoluminescence spectroscopy. These lifetimes are consistent with differences in the intensity measured under steady-state excitation suggesting that trap-assisted recombination limits the minority carrier lifetime, even away from dislocations. Our techniques also reveal the dramatic growth of misfit dislocations in these structures under carrier injection fueled by recombination-enhanced dislocation glide and III-V/Si residual strain. Beyond these direct effects of increased nonradiative recombination, we find the long-range strain field of misfit dislocations deeper in the defect filter layers employed during III-V/Si growth alter the QD growth environment and introduce a crosshatch-like variation in the QD emission color and intensity when the filter layer is positioned close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. Our work presents a more complete picture of the impacts of dislocations relevant for the development of light sources for scalable silicon photonic integrated circuits.

Dislocation Analysis of InGaN/GaN Quantum Dots Grown by Metal Organic Chemical Vapor Deposition

Generation and Behavior of Pure-Edge Threading Misfit Dislocations in InxGa1−xN∕GaN Multiple Quantum Wells

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

The Origin and Evolution of V-defects in InxAl1−xN Epilayers Grown by Metalorganic Chemical Vapor Deposition

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

1.3-Mu M Inas/Gaas Quantum Dots Grown On Si Substrates

The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface

Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates

Edge Dislocation Induced Self-Assembly of InGaN Nano-Flower on GaN by Metal Organic Vapor Phase Epitaxy

Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method

Dislocations And Related Traps In P-Ingaas/Gaas Lattice-Mismatched Heterostructures

Growth and Property of Surface Stress Induced InGaN Quantum Dots

Study on the Dislocations in GaN Films by Wet-Chemical Etching

Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon

Dislocation generation mechanism analysis of GaN grown on patterned sapphire substrate

Formation of M-Plane Ingan/Gan Quantum Dots Using Strain Engineering of Algan/Aln Interlayers

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Epitaxy of GaN in High Aspect Ratio Nanoscale Holes over Silicon Substrate

Study on strain relaxation in AlGaN/GaN superlattices grown by metal-organic chemical vapor deposition

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates