Abstract:Abstract Low-dimensional semiconductor structurers formed on a substrate surface at pre-defined locations and with nano-precision placement is of vital interest. The potential of tailoring their electrical and optical properties will revolutionize the next generation of optoelectronic devices. Traditionally, highly aligned self-assembly of semiconductors relies on Stranski- Krastanov growth mode. In this work, we demonstrate a pathway towards ordered configuration of Ge islands on low lattice mismatch GaAs (110) substrate patterned using depth-controlled nanoindentation. Diamond probe tips with different geometries are used to nano-mechanically stamp the surface of GaAs (110). This creates nanoscale volumes of dislocation-mediated deformation which acts to bias nucleation. Results show that nanostamped GaAs exhibits selective-nucleation of Ge at the indent sites. Ge islands formed on a surface patterned using cube corner tip have height of ~10 nm and lateral size of ~225 nm. Larger islands are formed by using Vickers and Berkovich diamond tips (~400 nm). The strain state of the patterned structures is characterized by micro-Raman spectroscopy. A strain value up to 2% for all tip geometries has been obtained. Additionally, strong room temperature photoluminescence (PL) emission is observed around 1.9 μm (650 meV). The observed strain-induced enhancement in the light-emission efficiency is attributed to direct conduction to heavy-hole (cΓ-HH) and conduction to light-hole (cΓ-LH) transitions. The inherent simplicity of the proposed method offers an attractive technique to manufacture semiconductor quantum dot structures for future electronic and photonic applications.

Edge Dislocation Induced Self-Assembly of InGaN Nano-Flower on GaN by Metal Organic Vapor Phase Epitaxy

Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor

Dislocation Evolution in Anisotropic Deformation of GaN under Nanoindentation

Dislocation Analysis of InGaN/GaN Quantum Dots Grown by Metal Organic Chemical Vapor Deposition

Dislocation Cross-Slip In Gan Single Crystals Under Nanoindentation

Nano-indentation Study of Dislocation Evolution in GaN-based Laser Diodes

Dislocation evolution in GaN-based Laser Diodes under nano-indentation

Investigation of edge effect on wurtzite gallium nitride in nanoindentation using molecular dynamics simulation

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Epitaxy of GaN in High Aspect Ratio Nanoscale Holes over Silicon Substrate

Dislocation luminescence in GaN single crystals under nanoindentation

Mechanical Nano-Patterning: Toward Highly-Aligned Ge Self-Assembly on Low Lattice Mismatched GaAs Substrate

InGaN Nanocolumn Growth Self-Induced by In-Situ Annealing and Ion Irradiation During Growth Process with Molecular Beam Epitaxy Method

Zn-dopant dependent defect evolution in GaN nanowires

Silicon-induced Strain Relaxation and Enhanced Gallium Surfactant Effects on Gallium Nitride Island Shaping

Generation and Behavior of Pure-Edge Threading Misfit Dislocations in InxGa1−xN∕GaN Multiple Quantum Wells

Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth

Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy

In Situ Pendeoepitaxy of GaN Using Heteroepitaxial AlGaN∕GaN Cracks

Generation of Misfit Dislocations by Basal-Plane Slip in InGaN∕GaN Heterostructures

Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers