Abstract:We address the mechanism of early stages of growth and shape transition of the unique nanowall network (NwN) nanostructure of GaN by experimentally monitoring its controlled growth using PA-MBE and complementing it by \textit{first-principles} calculations. Using electron microscopy, we observe the formation of tetrahedron shaped (3 faced pyramid) islands at early stages of growth, which later grows anisotropically along their edges of the (20$\overline{2}$1) facets, to form the wall like structure. The mechanism of this crystal growth is discussed in light of surface free energies of the different surfaces, adsorption energy and diffusion barrier of Ga ad-atoms on the (20$\overline{2}$1) facets. By \textit{first-principles} calculations, we find that the diffusion barrier of ad-atoms decreases with decreasing width of facets, and is responsible for the anisotropic growth and formation of the nanowall network. This study suggest that formation of NwN is a archetype example of structure dependent attachment kinetic (SDAK) instability induced shape transition in thin film growth.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the morphological transformation mechanism of gallium nitride (GaN) nano - wall networks (NwN) in the early growth stage. Specifically, the researchers explored the following issues through experimental monitoring and first - principles calculations: 1. **Initial growth morphology**: What initial morphologies were formed during the early growth of GaN nanostructures? How did these morphologies evolve? 2. **Morphological transformation mechanism**: What mechanism drives the morphological transformation from three - dimensional island - like structures to nano - wall networks? In particular, is this transformation related to surface free energy, adsorption energy, and the diffusion barrier of Ga atoms on different crystal planes? 3. **Reason for anisotropic growth**: Why does GaN exhibit anisotropic growth in certain directions? What is the impact of this anisotropic growth on the formation of the final nano - wall network? 4. **Structure - Dependent Attachment Kinetics (SDAK) instability**: Is there a Structure - Dependent Attachment Kinetics (SDAK) instability? How can the effect of this instability on morphological transformation be explained? ### Main findings - **Initial morphology**: In the early growth stage of GaN, tetrahedral - shaped island - like structures (three - faced pyramids) were formed. As the growth time increased, these island - like structures grew anisotropically along the edges of the (20 21) crystal plane and eventually formed wall - like structures. - **Anisotropic growth mechanism**: Through first - principles calculations, the researchers found that the diffusion barrier of Ga atoms on the narrower (20 21) crystal plane is lower, while on the wider crystal plane it is higher. Therefore, Ga atoms are more likely to diffuse to the narrower edge regions, resulting in preferential edge growth. - **SDAK instability**: The researchers proposed that this anisotropic growth can be attributed to Structure - Dependent Attachment Kinetics (SDAK) instability. When diffusion - related growth is coupled with structure - dependent attachment kinetics, SDAK instability becomes significant, leading to edge - enhanced growth. ### Conclusion This study shows that the morphological transformation of GaN nano - wall networks is a typical shape - transformation process caused by Structure - Dependent Attachment Kinetics (SDAK) instability. This finding provides a theoretical basis and experimental evidence for controlling and optimizing the growth of GaN nanostructures. ### Formula summary - **Adsorption energy formula**: \[ E_{\text{ads}}(\text{Ga}) = E_{\text{tot}}(\text{adatom}+\text{wedge}) - E_{\text{tot}}(\text{wedge}) - \mu_{\text{Ga}} \] where $E_{\text{tot}}(\text{adatom}+\text{wedge})$ is the total energy of the structure containing Ga adatoms and the wedge, $E_{\text{tot}}(\text{wedge})$ is the total energy of the original wedge structure, and $\mu_{\text{Ga}}$ is the chemical potential of α - Ga. - **Diffusion barrier**: Research shows that the diffusion barrier of Ga atoms on the (20 21) crystal plane decreases as the width of the crystal plane decreases, which explains the phenomenon of preferential edge growth. Through these studies, the authors revealed the key mechanisms in the formation of GaN nano - wall networks and provided an important reference for future material design and applications.

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