Abstract:As well-known,heteroepitaxial growth on sapphire is mainly employed to obtain optoelectronic(devices) because there is no suitable substrate matching with GaN.Therefore,the GaN layer suffers from a stress due to large difference in lattice constants and thermal expansion coefficients between the GaN and sapphire.To improve the quality of devices,the epitaxial lateral overgrowth(ELO) technique is applied to GaN.ELO-GaN on patterned SiO_2/GaN/α-Al_2O_3 substrate is grown by metalorganic chemical vapor deposition(MOCVD).First,a high quality 3 μm thick layer of GaN is grown by MOCVD.Next,standard deposition and photolithographic techniques are employed to prepare a set of parallel SiO_2 stripes oriented along a(〈11-00〉) GaN crystal direction separated by window areas which expose the underlying GaN.A second deposition of GaN onto this patterned substrate is then initiated.During the initial GaN growth,the SiO_2 stripes function as nonwettable surfaces and no GaN deposition occurs on them.However,once the GaN film growth from the window stripes reaches the tops of the SiO_2 stripes,epitaxial lateral overgrowth of GaN commences.The GaN thickness of the second step growth is about 10 μm.The results of a systematic study of the ELO-GaN on sapphire are reported.Atomic force microscopy(AFM) images showed that the surface of ELO-GaN is smooth and that there are linear-configuration hillocks in the middle of mask region,which are caused by the misorientation of crystalline when the ELO-GaN coalesce above the masks.The X-ray diffraction(XRD) curve revealed that the tilts in the(〈11-20〉) direction between GaN in window regions and mask regions are about 1.2°.Raman scattering spectrum revealed that the stress in the mask region is smaller than that in the window region and also the quality of GaN is much higher in the mask region.As a result,the quality of GaN crystalloid is effectively improved by MOCVD using the ELO technique.

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Crystalline Quality Improvement of GaN Coalesced Using Nano‐pss with Void‐embedded Nanostructure by MOVPE

A Study of GaN Nucleation and Coalescence in the Initial Growth Stages on Nanoscale Patterned Sapphire Substrates Via MOCVD

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal-organic vapor phase epitaxy

Mosaic structure in epitaxial GaN film varying with thickness

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates