Abstract:We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode as well as the chemical, morphological and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by RHEED, XRD, RBS, NRA, EDX spectroscopy, AFM and TEM. Our results show that, up to x = 0.04, it is possible to synthesize smooth and chemically homogeneous GaP1-xNx layers with a high-structural quality in a 2D fashion, namely, layer-by-layer. For a given N mole fraction, the layer-by-layer growth mode is favored by lowering the growth temperature while decreasing the N precursor flux. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [110] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of {113}-faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent (113) and (-1-13) facets. We conclude on the feasibility of fabricating homogeneous thick GaP1-xNx layers lattice matched to Si (x = 0.021) or even with N content up to x=0.04. The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological-compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D-3D growth mode transition.

Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Initial Stages of Growth of the GaN(11 2) Layer on a Nano-structured Si(113) Substrate

Morphology dependent surface properties of nanostructured GaN films grown by molecular beam epitaxy

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Study on Surface Morphology of GaN Growth by MOCVD on GaN/Si(111) Template

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

Crystallographic Plane and Topography-Dependent Growth of Semipolar InGaN Nanorods on Patterned Sapphire Substrates by Molecular Beam Epitaxy

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

Microscopic Study of Submonolayer Nucleation Characteristics During GaN (0001) Homoepitaxial Growth

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Growth modes and coupled morphological-compositional modulations in GaP1-xNx layers grown on nominally (001)-oriented Si substrates

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

Effect of Buffer Temperature on Epilayer Morphology for GaN on Si(111)

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Surface Morphology of Polar, Semipolar and Nonpolar Freestanding GaN after Chemical Etching