Abstract:An on-lattice kinetic Monte Carlo model is constructed to investigate microscopic nucleation behavior during the submonolayer epitaxial growth of GaN islands, where the Ga and N atoms are treated as the basic particles. The input kinetic parameters of Ga and N, including their surface diffusion energy barriers, were obtained from previous ab initio calculations. Furthermore, a simple and effective bond counting rule is applied in our kinetic Monte Carlo model, and the statistics of the GaN islands on the surface are realized via the application of the Hoshen–Kopelman algorithm. The growth temperature range covers the typical growth temperatures used in the molecular beam epitaxy of GaN. The results obtained show that triangular GaN flakes are observed and that the shapes of the GaN islands remain triangular when the growth temperature is changed. Additionally, the power law for the maximum density of islands versus the ratio of the effective diffusion to the deposition rate is obtained; the exponent of this law is −0.506 ± 0.006, indicating that these triplets represent the seeds required for further nucleation. Finally, the coexistence of the Ga-edge and N-edge types of triangular GaN islands is observed. The island formation mechanism is attributed to a local monomer density misbalance, and it is also shown that a slight variation in the Ga/N ratio in the deposition flux changes the proportion of the Ga-edge and N-edge type triangles; this represents a further indication that controllable GaN morphologies can be obtained by tuning the chemical potentials of the constituent elements.

Initial Stages of Growth of the GaN(11 2) Layer on a Nano-structured Si(113) Substrate

Growth of GaN on Si(111) by inserting δAl/AlN buffer layer

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer

Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Gan Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Microscopic Study of Submonolayer Nucleation Characteristics During GaN (0001) Homoepitaxial Growth

Selective area growth of GaN on GaAs(0 0 1) substrates by metalorganic vapor-phase epitaxy

Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Growth of GaN Films by Nitriding Ga2O3 Films Sputtered on the Ga-diffused Si(111)Substrate

Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics