Abstract:The heteroepitaxial growth of vertically aligned gallium nitride (GaN) single-crystalline microrod arrays on silicon substrates was achieved with high reproducibility by using the plasma-enhanced chemical vapor deposition (PECVD) method in the furnace. By reducing the plasma power from 70 to 15 W, the crystal morphology of GaN varied from thin films to microrod arrays with the decreased V/III gas ratio. The growth of GaN crystals occurred in the vertical direction of the substrate and in the lateral direction of the growth axis via the self-catalytic vapor-liquid-solid mechanism (VLS mechanism) and the vapor-solid mechanism (VS mechanism), respectively, contributing to the formation of inverted hexagonal GaN cone microrods. Furthermore, the morphology of inverted hexagonal GaN cone microrods shows extremely small contact areas between the microrods and the substrate, suggesting the potential to solve the problems of stress accumulation and poor crystalline qualities of heteroepitaxy. With the raised growth temperature of GaN from 930 to 980 °C, the material quality was improved and the high crystalline qualities were obtained, owing to the successful surface migration of gallium atoms. However, the density of GaN microrods became lower with the increased growth temperature because the spatial temperature gradient was reduced and the evaporation of gallium was enhanced, leading to fewer gallium atoms precipitating and remaining on the substrate. The growth direction of vertically aligned GaN single-crystalline microrod arrays with the (002) crystal plane is along the [0001] orientation (c axis) and normal to the substrate surface, which may bring about many device applications in future studies.

Selective area growth of GaN on GaAs(0 0 1) substrates by metalorganic vapor-phase epitaxy

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Cost-effective Selective-Area Growth of GaN-based Nanocolumns on Silicon Substrates by Molecular-Beam Epitaxy

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal-Organic Chemical Vapor Deposition

Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern

Initial Stages of Growth of the GaN(11 2) Layer on a Nano-structured Si(113) Substrate

Epitaxy of Single-Crystalline GaN Films on Novel Ca3Ta(Ga0.5Al0.5)3Si2O14 Substrates by Metal-Organic Chemical Vapor Deposition

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Nucleation Mechanism for Epitaxial Growth of GaN on Patterned Sapphire Substrates

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Growth of GaN Films by Nitriding Ga2O3 Films Sputtered on the Ga-diffused Si(111)Substrate

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Selective epitaxial growth of GaAs on Ge by MOCVD

Epitaxial growth of GaN film on Si substrate

Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN