Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Growth of GaN Films by Nitriding Ga2O3 Films Sputtered on the Ga-diffused Si(111)Substrate

GaN films synthesized through reactively reconstructing Ga_2O_3 films sputtered on Ga-diffused Si substrates

Electron Microscope Analysis of the Quality of GaN Films Deposited on Ga-diffused Si (1 1 1) Substrates

Influence of Ga Concentration in Si Substrates on the Quality of GaN Films

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Formation of GaN film by ammoniating Ga2O3/Al2O3 deposited on Si(lll) substrate

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Preparation and Properties of Gan Micro-Ribbons on Ga-Diffused Si (111) Substrates

Photoluminescence study of GaN film grown by ammoniating Ga2O3/Al2O3 deposited on Si(111) substrate

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

An investigation on the epitaxial growth of GaN film on Si(111) substrate

Structural and Photoluminescence Characterization of GaN Film Grown on Si (111) Substrate

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

Investigation of GaN films grown on Si substrates by hot-wall chemical vapor deposition

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition