Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Photoluminescence study of GaN film grown by ammoniating Ga2O3/Al2O3 deposited on Si(111) substrate

Formation of GaN film by ammoniating Ga2O3/Al2O3 deposited on Si(lll) substrate

Growth of GaN Films by Nitriding Ga2O3 Films Sputtered on the Ga-diffused Si(111)Substrate

Photoluminescene Spectra of GaN Epilayer Grown on Si Substrate

A Study on a Two-Step Technique of Growing Ga2O3/ZnO Films Ammoniated at Different Temperatures

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Luminescence property of GaN films with change of thickness

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Effects of isochronal thermal annealing and hydrogenation on photoluminescence from n-type GaN films grown by metalorganic vapor phase epitaxy

Low Temperature Photoluminescence Properties of InGaN Films Grown on (0 1 2) Al2O3 and (0 0 0 1) Al2O3 Substrates by Low Pressure MOVPE

Temperature-Dependent Photoluminescence from GaN/Si Nanoporous Pillar Array

GaN films synthesized through reactively reconstructing Ga_2O_3 films sputtered on Ga-diffused Si substrates

Structural and Photoluminescence Characterization of GaN Film Grown on Si (111) Substrate

Low temperature photoluminescence properties of InGaN films grown on (01(1)over-bar2) Al2O3 and (0001) Al2O3 substrates by low pressure MOVPE

Photoluminescence of Mg-Doped GaN Epilayers at Different Concentrations

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Secondary Ion Mass Spectroscopy and Photoluminescence Investigations on the Gan Epilayer Grown on Si Substrate

Optical Properties of Mg-implanted GaN

Photoluminescence of Mg-Doped Gan with Different Mg Concentrations after Annealing at Different Temperatures

Influence of Ga Concentration in Si Substrates on the Quality of GaN Films

An investigation on the epitaxial growth of GaN film on Si(111) substrate