Abstract:Mg is currently the only p-type dopant in technological use in GaN. Its incorporation into the GaN lattice is difficult. It requires a thermal treatment that only partially activates the Mg. To achieve moderate p-type doping requires high doses of Mg that mostly remain inactive. High p-type doping is thus typically achieved at the cost of certain lattice distortion and the creation of defects. Using low-temperature surface photovoltage spectroscopy, we obtain a wide spectrum of optical transitions within the bandgap of Mg-doped GaN. The results reveal an optical transition from the valence band into a deep trap around 0.49 eV above the valence band, along with what appears to be a complimentary transition from the same trap into the conduction band observed at 2.84 eV (coinciding with the energy of the famous Mg-related GaN blue luminescence). The similar shape of the spectra, their complimentary energies within the GaN gap and their opposite nature (hole vs. electron trap) appear to be more than a coincidence suggesting that this is an Mg-related surface state. The density of charge we calculate for this surface state is about 2x1012 cm-2. We suggest that these small amounts of surface-segregated Mg partially oxidize during the growth and further oxidize during the consecutive Mg-activation heat treatment. This minute quantity of oxidized surface Mg should be about enough to form an Mg-related surface state. Etching the GaN with H3PO4 is shown to affect the photovoltage at the blue-luminescence-related energy. Finally, we show that pure MgO powder produces the same blue luminescence even at the absolute absence of GaN.

Photoluminescence of Mg-Doped GaN Epilayers at Different Concentrations

Photoluminescence of Mg-Doped Gan with Different Mg Concentrations after Annealing at Different Temperatures

Optical and Electrical Properties of GaN: Mg Grown by MOCVD

Study on MOCVD-Grown Mg-Doped GaN by Annealing Treatment

Effects of Strain and Mg-Dopant on the Photoluminescence Spectra in P-Type Gan

Optical Properties of Mg-implanted GaN

Pressure dependence of the blue luminescence in Mg-doped GaN

Effect Of Potential Fluctuations On Photoluminescence In Mg-Doped Gan

Influence of Polarities on Optical Properties of Mg-doped GaN Films Grown on GaN Free-Standing Substrates by MOCVD

Properties of Mg-Doped AlGaN Films

Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy

Comparison of As-Grown and Annealed GaN/InGaN : Mg Samples

Photoluminescence study of GaN film grown by ammoniating Ga2O3/Al2O3 deposited on Si(111) substrate

Optical properties of Mn4+ ions in GaN:Mn codoped with Mg acceptors

Is the Mg-related GaN blue luminescence deep-level an MgO surface state?

Effect of Annealing on Photoluminescence and Microstructures of Ingan/Gan Multi-Quantum Well with Mg-Doped P-Type Gan

Giant shifts of photoluminescence bands in GaN

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped Gan

Luminescence property of GaN films with change of thickness

Growth and Properties of Mg-doped In-polar InN Films