Effects of Cp 2 Mg molar flow rate on structural, optical, and electrical properties of semipolar Mg-doped p-AlGaN epi-layers
Zhiyi Lou,Xiong Zhang,Ruiting Fang,Yifeng Xu,Jia Cui,Yani Gao,Zelin Cao,Mu-Jen Lai,Qian Dai,Guohua Hu
DOI: https://doi.org/10.1016/j.optmat.2024.115494
IF: 3.754
2024-05-11
Optical Materials
Abstract:The semipolar (11 2 ̅ 2) plane Mg-doped p-Al 0.42 Ga 0.58 N epi-layers were successfully deposited on (10 1 ̅ 0) m-plane sapphire substrates with metal organic chemical vapor deposition technology. The effects of Cp 2 Mg molar flow rate on the structural, optical, and electrical properties of p-Al 0.42 Ga 0.58 N epitaxial layer were extensively studied. The randomly distributed Mg atoms and/or clusters that partially covered the growth surface were verified to act as an island-like mask to block the propagation of dislocations along the growth direction, resulting in a significant improvement in the crystalline quality of the semipolar Mg-doped p-AlGaN epi-layers. Moreover, two emission peaks with novel behavior were observed in the photoluminescence spectrum and identified to be originated from the transition between the conduction band and the Mg-related shallow acceptor energy level, and the deep Mg-induced compensation donor and the Mg acceptor pair-related transition, respectively. In addition, a hole concentration as high as 1.03 × 10 17 cm −3 and a resistivity as low as 12.8 Ω cm were achieved for the semipolar Mg-doped p-Al 0.42 Ga 0.58 N epi-layer grown with the optimized Cp 2 Mg molar flow rate in this study.
materials science, multidisciplinary,optics