Abstract:We experimentally investigate the microstructures and growth features of the AlN epilayers on c-Al2O3 (0001) substrates grown by ammonia-free high temperature metalorganic chemical vapor deposition (AFHT-MOCVD). Besides the conventional threading dislocations (TDs) in the AlN epilayer and the voids at the AlN epilayer/substrate interface, lattice-polarity inversion phenomenon is confirmed in the AlN growth, where laterally distributed zigzag inversion domain boundary (IDB) is observed. Lattice-polarity at different points in the AlN epilayer is directly determined by high-resolution scanning transmission electron microscope (HR-STEM). A series of the AlN morphology characterizations by scanning electron microscope (SEM) with and w/o KOH etching faithfully reproduces the lattice-polarity inversion process at the different AlN growth stages. The AlN micro-crystal with N-polarity is firstly grown on the sapphire substrate. Following, the lattice-polarity inversion process begins to appear here and there with the small Al-polar AlN trapezoid formation. With the growth in progress, an IDB formation with a laterally distributed zigzag shape is achieved due to the higher growth rates in Al-polar AlN both in vertical and lateral directions. Finally, the initially grown N-polar AlN is completely covered by the Al-polar AlN, resulting in a pure Al-polar AlN epilayer on the top. Our results in this study give deep insights to the mechanism understanding of the unique growth technique for the high quality AlN growth, which is important for the optical and the electronic device applications.

Polarity Inversion in High Mg-Doped In-Polar Inn Epitaxial Layers

Growth and Properties of Mg-doped In-polar InN Films

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

Coexistence of Free Holes and Electrons in InN:Mg with In- and N-growth Polarities

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

Advantage Of In- Over N-Polarity For Disclosure Of P-Type Conduction In Inn:Mg

MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison Between N-polarity and In-polarity Growth Processes

Hole Mobility in Mg-Doped P-Type Inn Films

Anomalous Surface Potential Behavior Observed In Inn By Photo-Assisted Kelvin Probe Force Microscopy

Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN

Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging

Electrical Properties of Surface and Interface Layers of the N- and In-polar Undoped and Mg-doped InN Layers Grown by PA MBE

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Infrared Analysis of Hole Properties of Mg-doped P-Type InN Films

Behaviours of the lattice-polarity inversion in the AlN growth on the c-Al2O3(0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition

In Adlayers on C-Plane Inn Surfaces: A Polarity-Dependent Study by X-Ray Photoemission Spectroscopy

V-shaped Inversion Domains in InN Grown on C-Plane Sapphire

Phase Separation Resulting from Mg Doping in p-InGaN Film Grown on GaN/Sapphire Template

Variation of Band Bending at the Surface of Mg-Doped Ingan: Evidence of P-Type Conductivity Across the Composition Range

Electrical Properties of Ingan Grown by Molecular Beam Epitaxy