Abstract:Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from 1.2 x 10(17) cm(-3) to 8 x 10(20) cm(-3) are compared. P-type conductivity is indicated for the Mg concentration range of 1 x 10(18) cm(-3) to 9 x 10(19) cm(-3) from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Schoche et al., J. Appl. Phys. 113, 013502 (2013)]. In the second set, two samples with Mg concentration of 2.3 x 10(20) cm(-3) are identified as compensated n-type InN with very low electron concentrations which are suitable for further investigation of intrinsic material properties that are typically governed by high electron concentrations even in undoped InN. The compensated n-type InN samples can be clearly distinguished from the p-type conductive material of similar plasma frequencies by strongly reduced phonon plasmon broadening. (C) 2014 Elsevier B.V. All rights reserved.

Coexistence of Free Holes and Electrons in InN:Mg with In- and N-growth Polarities

Search for Free Holes in Inn:Mg-Interplay Between Surface Layer and Mg-Acceptor Doped Interior

Anomalous Hall Mobility Kink Observed in Mg-doped InN: Demonstration of P-Type Conduction

Polarity Inversion in High Mg-Doped In-Polar Inn Epitaxial Layers

Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN

Advantage Of In- Over N-Polarity For Disclosure Of P-Type Conduction In Inn:Mg

Hole Mobility in Mg-Doped P-Type Inn Films

Electrical Properties of Surface and Interface Layers of the N- and In-polar Undoped and Mg-doped InN Layers Grown by PA MBE

Infrared Analysis of Hole Properties of Mg-doped P-Type InN Films

Anomalous Surface Potential Behavior Observed In Inn By Photo-Assisted Kelvin Probe Force Microscopy

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

Hole Density And Anisotropic Mobility Of Mg-Doped Inn From The Analysis Of Lo Phonon-Hole Plasmon Properties

Growth and Properties of Mg-doped In-polar InN Films

Free-charge Carrier Parameters of N-Type, P-Type and Compensated InN:Mg Determined by Infrared Spectroscopic Ellipsometry

Puzzle Of Non-Surface Related 2d Electron Gas In N-Inn Epitaxial Samples

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

Correlation Between Switching to N-Type Conductivity and Structural Defects in Highly Mg-doped InN

Variation of Band Bending at the Surface of Mg-Doped Ingan: Evidence of P-Type Conductivity Across the Composition Range

Demonstration of Nearly Non-Degenerate Electron Conduction in Inn Grown by Molecular Beam Epitaxy