Abstract:Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from 1.2 x 10(17) cm(-3) to 8 x 10(20) cm(-3) are compared. P-type conductivity is indicated for the Mg concentration range of 1 x 10(18) cm(-3) to 9 x 10(19) cm(-3) from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Schoche et al., J. Appl. Phys. 113, 013502 (2013)]. In the second set, two samples with Mg concentration of 2.3 x 10(20) cm(-3) are identified as compensated n-type InN with very low electron concentrations which are suitable for further investigation of intrinsic material properties that are typically governed by high electron concentrations even in undoped InN. The compensated n-type InN samples can be clearly distinguished from the p-type conductive material of similar plasma frequencies by strongly reduced phonon plasmon broadening. (C) 2014 Elsevier B.V. All rights reserved.

Variation of Band Bending at the Surface of Mg-Doped Ingan: Evidence of P-Type Conductivity Across the Composition Range

Surface Electronic Properties of N‐ and P‐type InGaN Alloys

Determination of the transition point from electron accumulation to depletion at the surface of In x Ga1− x N films

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Determination of the Surface Band Bending in in X Ga1-x N Films by Hard X-Ray Photoemission Spectroscopy.

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Electrical Properties of Ingan Grown by Molecular Beam Epitaxy

Hole Mobility in Mg-Doped P-Type Inn Films

Anomalous Hall Mobility Kink Observed in Mg-doped InN: Demonstration of P-Type Conduction

Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

Realization Of P-Type Conduction In Undoped Mgxzn1-Xo Thin Films By Controlling Mg Content

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Anisotropic, Fermi-Surface-Induced Variation in T_c in MgB_2 Alloys

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

First-Principles Study of the P-Type Doped Inn

Free-charge Carrier Parameters of N-Type, P-Type and Compensated InN:Mg Determined by Infrared Spectroscopic Ellipsometry

Growth and Properties of Mg-doped In-polar InN Films

Surface Electronic Properties of Undoped Inaln Alloys

Accurate Surface Band Bending Determination on Ga-polar N-Type GaN Films by Fitting X-Ray Valence Band Photoemission Spectrum

Coexistence of Free Holes and Electrons in InN:Mg with In- and N-growth Polarities