Abstract:Mg x Zn 1 − x O (x≈0.19) films were, respectively, deposited by reactive sputtering on the heavily arsenic-doped (n+), lightly phosphorus-doped (n−), heavily boron-doped (p+), and lightly boron-doped (p−) silicon substrates. The sputtered MgxZn1−xO films were n-type with an electron concentration of 4.1×1017cm−3. Moreover, the energy-band gap of the MgxZn1−xO films was determined to be ∼3.67eV. The MgxZn1−xO∕n−-Si and MgxZn1−xO∕p−-Si heterojunctions showed rectifying behavior to different degrees while the MgxZn1−xO∕n+-Si and MgxZn1−xO∕p+-Si heterojunctions did not possess rectifying function. The MgxZn1−xO∕n+-Si heterojunction exhibited UV near-band-edge and visible defect-related electroluminescence (EL) under the forward bias but only visible EL under reverse bias; while the MgxZn1−xO∕n−-Si heterojunction only emitted relatively weak UV and visible EL under the forward bias. On the other hand, the MgxZn1−xO∕p+-Si heterojunction was electroluminescent in the visible region under the forward bias while in both the UV and visible regions under the reverse bias; and the MgxZn1−xO∕p−-Si heterojunction did not exhibit detectable EL under either forward or reverse bias. The mechanisms of the EL and carrier transport for the above-mentioned heterojunctions have been tentatively explained in terms of their energy-band structures.

Realization Of P-Type Conduction In Undoped Mgxzn1-Xo Thin Films By Controlling Mg Content

Carrier Concentration Induced Band-Gap Shift in Al-doped Zn1−xMgxO Thin Films

P-Type Behavior in Li-doped Zn0.9Mg0.1O Thin Films

Formation of P-Type Mgzno by Nitrogen Doping

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Enhancement of P-Type Conduction in Ag-doped ZnO Thin Films Via Mg Alloying: the Role of Oxygen Vacancy

Fabrication and Properties of P-Type K Doped Zn1−Mg O Thin Film

Electroluminescent and Carrier Transport Mechanisms of MgxZn1−xO∕Si Heterojunctions

Control of Structure, Conduction Behavior, and Band Gap of Zn1−xMgxO Films by Nitrogen Partial Pressure Ratio of Sputtering Gases

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

Preparation and Properties of P-Type Ag-doped ZnMgO Thin Films by Pulsed Laser Deposition

Fabrication of P-Type ZnMgO Films Via Pulsed Laser Deposition Method by Using Li As Dopant Source

The Fabrication of Na Doped P -Type Zn 1− X Mg X O Films by Pulsed Laser Deposition

Realization of Na-doped P-Type Non-Polar A-Plane Zn1−xCdxO Films by Pulsed Laser Deposition

P-Type Conduction in Phosphorus-Doped ZnO Thin Films by MOCVD and Thermal Activation of the Dopant

p-Type conduction in Al–N co-doped ZnO films

Fabrication and Post-Anneal Activation of P-Type ZnMgO:Li Film Using Dc Reactive Magnetron Sputtering

Evolution Of Optical Properties And Electronic Structures: Band Gaps And Critical Points In Mgxzn1-Xo (0 X 0.2) Thin Films

Stability of P-type Conductivity in Nitrogen-Doped MgZnO Thin Film

The Structural, Electrical and Optical Properties of Mg-doped ZnO with Different Interstitial Mg Concentration