Abstract:A first principles calculation is used to simulate the changes of the lattice constant, band gap, total energy and structure of MgZnO semiconductor alloys with the different MgO mole fractions. The calculated results show that the lattice constant diminishes and the crystal structure departures gradually from the wurtzite type as the MgO mole fraction increases. By comparison with the different positions of the Mg atom, it is suggested that the structure of MgxZn1-xO alloy will change and the possibility of the phase transition will be higher than that of the phase separation as the MgO mole fraction increases. On the other hand, when the MgO mole fraction is increased, the band gap enlarges, which is mainly attributable to the shift of the top of the valence band away from the Fermi level. By construing the influence of all kinds of electronic states in Mg atom on the valence band, it shows that the contribution of Mg to the energy band near the top of the valence band takes turn from its p,d,s states. The density of the p states near the top of the valence band enhances prominently when the MgO mole fraction is increased. It indicates that the sp hybridization not only affects the structure of the crystal but also plays an important role for its electronic structures.

Evolution Of Optical Properties And Electronic Structures: Band Gaps And Critical Points In Mgxzn1-Xo (0 X 0.2) Thin Films

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Evolution of optical properties and electronic structures: band gaps and critical points in Mg<sub>x</sub>Zn<sub>1−x</sub>O (0 ≤ <i>x</i> ≤ 0.2) thin films

Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

Carrier Concentration Induced Band-Gap Shift in Al-doped Zn1−xMgxO Thin Films

Third-order Optical Nonlinearities of Zn_(1-x)MgxO Thin Films

First-principles GGA+U Investigation on the Electronic Structure and Optical Properties of Zn1-xMgxO

Spectroscopic ellipsometry studies of Mg-doped ZnO thin films prepared by the sol-gel method

Structural and Optical Studies of Mg(X)Zn(1-X)Ofilms Grown on Sapphire

Raman and Optoelectronic Properties of Zn1-Xmgxo Thin Films Prepared by Rf Magnetron Sputtering

Study on Band Structure and Spectrum of MgxZn1–xO Based on First Principles

Temperature-dependent optical properties of hexagonal and cubic Mg<sub><i>x</i></sub>Zn<sub>1 <i>x</i></sub>O thin-film alloys

Interface And Optical Properties Of Zn1-Xmgxo Films With Mg Content Of More Than 70% Grown On The (1(2)Over-Bar10)-Zno Substrates

The Structure Properties of MgxZn1-xO

Optical Properties Of Cubic Mgzno Thin Films

Effect of Mg Content on Structural, Electrical, and Optical Properties of Li-doped Zn1−xMgxO Thin Films

Theoretical investigation of the electronic structure and optical properties of zinc-doped magnesium oxide

Characterization of MgxZn1−xO Thin Films Prepared by Sol–gel Dip Coating

Mg Doping Effect on Nanoscale Crystallization and Band Gap of Sol-Gel Derived Mgxzn1-Xo (X=0-1) Alloys

Structure and Optical Properties of ZnMgO Thin Films Prepared by RF Magnetron Sputtering

Optical properties of Mg x Zn 1−x O thin films deposited on silicon and sapphire substrate by rf magnetron sputtering