Characterization of MgxZn1−xO Thin Films Prepared by Sol–gel Dip Coating

ZG Ji,YL Song,Y Xiang,K Liu,C Wang,ZZ Ye
DOI: https://doi.org/10.1016/j.jcrysgro.2004.02.083
IF: 1.8
2004-01-01
Journal of Crystal Growth
Abstract:MgxZn1−xO thin films were prepared on quartz substrates by a sol–gel dip-coating process. Structural and optical properties were investigated using X-ray diffraction, optical absorbance, and photoluminescence (PL). Results showed that the MgxZn1−xO thin films retained the ZnO hexagonal crystal structure with very little lattice deformation compared to the pure ZnO films. The optical band-gap of the MgxZn1−xO thin films varied from 3.28 to 3.73 eV as the Mg content x was increased from 0.0 to 0.3, and it can be formulated using the equation Eg=3.28+1.53x. Results also showed good PL characteristics of these films with strong band-edge UV emission. Like the absorption, the emission energy also shifted towards higher photon energy as the Mg content x in the film was increased.
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