P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

M. X. Qiu,X. Q. Gu,Z. Z. Ye,J. G. Lu,H. P. He,Y. Z. Zhang,B. H. Zhao
DOI: https://doi.org/10.1116/1.3159784
2009-01-01
Abstract:N-doped, Li-doped, and Li–N doped Zn0.89Mg0.11O thin films have been prepared by pulsed laser deposition. Hall-effect measurements indicate that the doping technique plays an important role in the p-type behavior of ZnMgO. Li doping produces high-resistivity p-type ZnMgO films, whereas N doping produces ZnMgO films with indeterminate carrier type. In contrast, Li–N codoping results in low resistivity and stable p-type ZnMgO films. The enhancement by Li and N coincorporation is investigated by secondary ion mass spectroscopy and is possibly responsible for the good p-type conduction in Li–N dual-acceptor doped Zn0.89Mg0.11O.
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