Fabrication and Properties of P-Type K Doped Zn1−Mg O Thin Film
L. Q. Zhang,Z. Z. Ye,J. Y. Huang,B. Lu,H. P. He,J. G. Lu,Y. Z. Zhang,J. Jiang,J. Zhang,K. W. Wu,W. G. Zhang
DOI: https://doi.org/10.1016/j.jallcom.2011.04.047
IF: 6.2
2011-01-01
Journal of Alloys and Compounds
Abstract:A series of K doped Zn1−xMgxO thin films have been prepared by pulsed laser deposition (PLD). Hall-effect measurements indicate that the films exhibit stable p-type behavior with duration of at least six months. The band gap of the K doped Zn1−xMgxO films undergoes a blueshift due to the Mg incorporation. However, photoluminescence (PL) results reveal that the crystallinity decreased with the increasing of Mg content. The fabricated K doped p-type Zn0.95Mg0.05O thin film exhibits good electrical properties, with resistivity of 15.21Ωcm and hole concentration of 5.54×1018cm−3. Furthermore, a simple ZnO-based p–n heterojunction was prepared by deposition of a K-doped p-type Zn0.95Mg0.05O layer on Ga-doped n-type ZnO thin film with low resistivity. The p–n diode heterostructure exhibits typical rectification behavior of p–n junctions.