Abstract:Mg-doped AlxGa1-xN (x = 0.23 and 0.35) alloys have been grown on GaN templates with high temperature AlN (HT-AlN) interlayer by metalorganic chemical vapor deposition (MOCVD). A combination of secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) indicates the formation of more inversion domains in the high Al mole fraction Mg-doped AlGaN alloys at Mg concentration similar to 10(20) cm(-3). For Mg-doped Al0.23Ga0.77N epilayer, the analysis of cathodoluminescence (CL) spectra supports the existence of self-compensation effects due to the presence of intrinsic defects and Mg-related centers. The energy level of Mg is estimated to be around 193 meV from the temperature dependence of the resistivity measured by Hall effect experiments. And hole concentration and mobility are measured to be 1.2 x 10(18) cm(-3) and 0.56 cm(2)/V at room temperature, respectively. The reduction of acceptor activation energy and low hole mobility are attributed to inversion domains and self-compensation. Moreover, impurity band conduction is dominant in carrier transport up to a relatively higher temperature in high Al content Mg-doped AlGaN alloys. (C) 2018 Elsevier Ltd. All rights reserved.

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

Terahertz Emission From Silicon And Magnesium Doped Indium Nitride

Growth and Properties of Mg-doped In-polar InN Films

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Polarity Inversion in High Mg-Doped In-Polar Inn Epitaxial Layers

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Broadband Terahertz Emission Based on the Femtosecond Laser Pulses

Advantage Of In- Over N-Polarity For Disclosure Of P-Type Conduction In Inn:Mg

Variation of Band Bending at the Surface of Mg-Doped Ingan: Evidence of P-Type Conductivity Across the Composition Range

Detecting P-Type Conduction in Ba-Doped Inn

Correlation Between Switching to N-Type Conductivity and Structural Defects in Highly Mg-doped InN

Infrared Analysis of Hole Properties of Mg-doped P-Type InN Films

Coexistence of Free Holes and Electrons in InN:Mg with In- and N-growth Polarities

Ionic Liquid Gated Electric-Double-Layer Transistors Based on Mg-Doped Inn Epitaxial Films

Search for Free Holes in Inn:Mg-Interplay Between Surface Layer and Mg-Acceptor Doped Interior

Hole Mobility in Mg-Doped P-Type Inn Films

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Anomalous Hall Mobility Kink Observed in Mg-doped InN: Demonstration of P-Type Conduction

Large Magnetoresistance Effect in Inn Epilayers

Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN