Abstract:Knowledge of the carrier recombination, relaxation, and transport processes in InN materials is essential for determining the applicability of this material system in photonic and electronic applications. In this article, we provide a review of time-resolved spectroscopy experimental techniques and our recent results using these techniques to measure transient processes in InN. Specifically, subpicosecond differential transmission experiments were used to determine the carrier recombination lifetime and the carrier thermalization time of InN. In those experiments, we observed a fast initial hot carrier cooling followed by a slower recombination process. At short times after pulsed excitation, modeling of the observed relaxation suggests that the dominant energy relaxation process is longitudinal optical phonon scattering modified by a strong hot phonon effect at room temperature. An inverse proportionality between the carrier lifetime and the free electron concentration was found. This suggests that donor-like defects or impurities may stimulate the formation of non-radiative recombination centers. Furthermore, we report the measurements of in-plane carrier transport and hole mobility of an InN epilayer by time-resolved transient grating spectroscopy using subpicosecond pulses at 800 nm and ~1900 nm for grating writing and probing, respectively. The ambipolar diffusion coefficient Da = 2.0 cm2/s and hole mobility µh = 39 cm2/Vs at 300 K near the InN surface were determined by monitoring the transient grating kinetics at various grating periods.

Terahertz Emission From Silicon And Magnesium Doped Indium Nitride

Terahertz Emission by InN

Broadband Terahertz Emission Based on the Femtosecond Laser Pulses

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

MBE Grown InN: A Novel THz Emitter

Ultrafast Recombination in Si-doped InN

Terahertz emission from silicon carbide nanostructures

Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN

Near-Infrared Electroluminescence From Light-Emitting Devices Based On Nd-Doped Tio2/P(+)-Si Heterostructures

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Registration of Terahertz Irradiation with Silicon Carbide Nanostructures

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Temperature Dependence of Terahertz Properties for InP

Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Emission of terahertz radiation from SiC

Growth and Properties of Mg-doped In-polar InN Films

INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION