Hong-Yang Cheng,Qian-Ru Ma,Hao-Ran Xu,Hui-Ping Zhang,Zuan-Ming Jin,Wei He,Yan Peng,Terahertz Spectrum and Imaging Cooperative Innovation Center, Engineering Research Center of Optical Instrument and System (Ministry of Education), Shanghai Key Lab of Modern Optical System, Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China,Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 200092, China,State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Abstract:Author(s): Cheng Hong-Yang, Ma Qian-Ru, Xu Hao-Ran, Zhang Hui-Ping, Jin Zuan-Ming, He Wei, Peng Yan Terahertz spectroscopy and imaging have many applications, so the generation of broadband terahertz radiation is very important, but now it faces some challenges. Opto-spintronic terahertz emitters, composed of nanometer-thin magnetic multilayer, can produce high-quality broad-band terahertz pulses. Integration of opto-spintronic terahertz emitters onto the silicon wafers is the first step towards their usage in modern photonic devices. In this work, Ta/CoFeB/Ir heterostructures are deposited on thermally oxidized silicon wafers by dc magnetron sputtering. Under the illumination of a femtosecond laser pulse on the Ta/CoFeB/Ir trilayer heterostructure grown on silicon substrate, a spin current can be generated in the ferromagnetic layer due to the ultrafast demagnetization. The spin current is transported and injected into the neighboring non-magnetic metal layers of Ta and Ir. Consequently, the spin current can be converted into the charge current due to the strong spin-orbit coupling. The sub-picosecond transient charge current gives rise to the terahertz radiation that enters into the free space. The terahertz electric field is fully inverted when the magnetization is reversed, which indicates a strong connection between THz radiation and spin order of the heterostructure. The THz radiation from Ta/CoFeB/Ir heterostructure covers the 0.1–2.5 THz frequency range with a maximum value of about 0.64 THz. We also investigate the dependence of THz peak-to-peak value on the pump fluence. The THz emission is found to be saturated at a pump fluence of ~0.73 mJ/cm<sup<2< (0.59±0.12)="" (~1.34="" 1.1="" 2.4="" about="" according="" and="" antiferromagnet="" are="" at="" attributed="" be="" by="" changing="" cofeb="" consistent="" coupling="" current="" demonstrate="" dependence="" different="" emission="" existence="" experimental="" extracted="" for="" frequencies="" from="" furthermore,="" ghz="" heavy="" heterostructure="" heterostructure,="" in="" ir="" ir.="" irmn="" is="" layer,="" layer.="" layers="" length="" may="" measurement="" metal="" nm="" nm).="" nm,="" observation="" of="" optimize="" optimized="" our="" p="" propagation="" regimes.="" respectively.<="" results="" shorter="" spin="" spin-orbit="" strong="" sup Acta Physica Sinica. 2024 73(16): 167801. Published 2024-08-20</sup<2<>

Emission of terahertz radiation from SiC

Terahertz emission from silicon carbide nanostructures

Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO$_{2}$:Er Films

Registration of Terahertz Irradiation with Silicon Carbide Nanostructures

Ultrafast All-Optical Switching in the Visible Spectrum with 6H Silicon Carbide

Terahertz-assisted even harmonics generation in silicon

Nonlinear optical properties of 6H-SiC and 4H-SiC in an extensive spectral range

Silicon carbide--a high-transparency nonlinear material for THz applications

Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization

Dual-Band Quasi-Coherent Radiative Thermal Source

Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon

Terahertz emission characterization of silicon based ferromagnetic heterostructures

Entangled photon pair generation in an integrated SiC platform

Bright room temperature single photon source at telecom range in cubic silicon carbide

Stimulated emission from hexagonal silicon-germanium nanowires

Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy

Visible-Infrared Femtosecond Laser-Induced Optical Breakdown of 6H SiC

Terahertz Emission From Silicon And Magnesium Doped Indium Nitride

Electron Field Emission from SiC∕Si Heterostructures by High Temperature Carbon Implantation into Silicon

Probing Silicon Carbide with Phase-Modulated Femtosecond Laser Pulses: Insights into Multiphoton Photocurrent