Abstract:For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon was grown by the method of substitution of atoms on silicon. The electroluminescence from the edge channels of nanostructures is induced due to the longitudinal drain-source current. The electroluminescence spectra obtained in the terahertz frequency range, 3.4, 0.12 THz, arise due to the quantum Faraday effect. Within the framework of the proposed model, the longitudinal current induces a change in the number of magnetic flux quanta in the edge channels, which leads to the appearance of a generation current in the edge channel and, accordingly, to terahertz radiation.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore and verify the terahertz (THz) radiation generated in silicon carbide (SiC) nanostructures grown on silicon substrates. Specifically, the author aims to experimentally detect and interpret the electroluminescence phenomena of these nanostructures in the mid - and far - infrared ranges and explore the underlying physical mechanisms. ### Research Background and Problem Description 1. **Application Prospects of Terahertz Radiation**: - Terahertz radiation (0.1 - 10 THz) has low - energy characteristics and does not cause molecular ionization, so it will not damage materials. - It can be used for non - destructive testing, drug - coating detection, and biomolecular structure research, etc. - For the fields of biology and medicine, terahertz radiation can be used for high - resolution diagnosis, such as skin moisture content monitoring and early skin cancer diagnosis. 2. **Problems with Existing Terahertz Sources**: - Current terahertz radiation source devices are complex and expensive, such as vacuum electronic devices and optically pumped gas lasers. - There is a need to develop compact and high - efficiency terahertz radiation sources. 3. **Unique Advantages of Silicon Carbide Nanostructures**: - Silicon carbide is a wide - band - gap semiconductor material with excellent crystal quality and is suitable for generating terahertz radiation. - Growing silicon carbide films on silicon substrates by the matched atomic substitution method can ensure high crystallinity and reduce stress and defects. ### Research Objectives - **Detect and Analyze Electroluminescence**: In the Hall geometry structure, detect the terahertz radiation generated from the edge channels of silicon carbide nanostructures by applying a longitudinal drain - source current. - **Explain Physical Mechanisms**: Based on the quantum Faraday effect, explain how the longitudinal current induces the change of magnetic flux quanta, thus leading to the generation current in the edge channels and the generation of terahertz radiation. ### Main Findings - **Terahertz Radiation Frequencies**: The terahertz radiation frequencies detected in the experiment are 3.4 THz and 0.12 THz. - **Fabry - Perot Oscillations**: Fabry - Perot oscillations are observed in the electroluminescence spectrum, corresponding to the modulation frequencies of 3.4 THz and 0.12 THz. - **Model Verification**: Through theoretical model calculations, the role of the quantum Faraday effect in terahertz radiation generation is confirmed, and the radiation frequency depends on the geometric parameters of the nanostructures. In conclusion, this paper successfully demonstrates the electroluminescence phenomenon of silicon carbide nanostructures in the terahertz frequency band through a combination of experimental and theoretical methods and provides a scientific basis for their potential applications.

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