Abstract:There is currently worldwide interest in developing silicon-based active optical components in order to leverage the infrastructure of silicon microelectronics technology for the fabrication of optoelectronic devices. Light emission in bulk silicon-based devices is constrained in wavelength to infrared emission, and in efficiency by the indirect bandgap of silicon1,2. One promising strategy for overcoming these challenges is to make use of quantum-confined excitonic emission in silicon nanocrystals. A critical challenge for silicon nanocrystal devices based on nanocrystals embedded in silicon dioxide has been the development of a method for efficient electrical carrier injection3,4,5,6,7,8. We report here a scheme for electrically pumping dense silicon nanocrystal arrays by a field-effect electroluminescence mechanism. In this excitation process, electrons and holes are both injected from the same semiconductor channel across a tunnelling barrier in a sequential programming process, in contrast to simultaneous carrier injection in conventional pn-junction light-emitting-diode structures. Light emission is strongly correlated with the injection of a second carrier into a nanocrystal that has been previously programmed with a charge of the opposite sign.

Terahertz emission from silicon carbide nanostructures

Registration of Terahertz Irradiation with Silicon Carbide Nanostructures

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Emission of terahertz radiation from SiC

Terahertz Emission From Silicon And Magnesium Doped Indium Nitride

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO$_{2}$:Er Films

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon

Room Temperature Visible Electroluminescence in Silicon Nanostructures

Single-atom Infrared Emission in Doped Silicon Nanocrystals.

Growth of nearly one nanometer large silicon particles in silicon carbide and their quantum-confined photoluminescence features

Enhanced Single Photon Emission from Carbon Nanotube Dopant States Coupled to Silicon Microcavities

Field-effect electroluminescence in silicon nanocrystals

Quantum sensing of radio-frequency signal with NV centers in SiC

Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy

Circularly polarized electroluminescence from silicon nanostructures heavily doped with boron

Electron Field Emission from SiC∕Si Heterostructures by High Temperature Carbon Implantation into Silicon