Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon

O.V. Chefonov,A.V. Ovchinnikov,S.A. Romashevskiy,X. Chai,T. Ozaki,A.B. Savel'ev,M.B. Agranat,V.E. Fortov
DOI: https://doi.org/10.1364/OL.42.004889
2017-10-10
Abstract:The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of $8.7\times10^{16}$ cm$^{-3}$) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm$^{-1}$ and a pulse duration of 700 fs. Huge transmittance enhancement of $\sim$90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5--3.1 MV cm$^{-1}$.
Optics
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