Abstract:Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Infrared Spectra of Silicon Nanowires

Temperature-dependent Raman Scattering of Silicon Nanowires.

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Origin of the 745 Nm Photoluminescence from Small Diameter Silicon Nanowires

Long-persistent luminescence in near-ultraviolet from silicon nanowires

Synthesis and Raman Spectra of Si-Nanowires

Structural and Luminescent Properties of Electron-Irradiated Silicon

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

Temperature-dependent Photoluminescence Properties of Porous Silicon Nanowire Arrays

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals

Light Emission from Si Nanoclusters Formed at Low Temperatures

Enhanced Visible Photoluminescence from Nc-Si/Siox Films Deposited by Electron Beam Evaporation

Catalytic Synthesis and Photoluminescence of Needle-Shaped 3c–sic Nanowires

Room Temperature Visible Electroluminescence in Silicon Nanostructures

Time-Resolved Photoluminescence Spectra Of Strong Visible Light-Emitting Sic Nanocrystalline Films On Si Deposited By Electron-Cyclotron-Resonance Chemical-Vapor Deposition

Oxygen Induced Strong Green Light Emission From Low-Temperature Grown Amorphous Silicon Nitride Films

Si-ion implantation-induced luminescence from Si single crystals with a SiO2 overlayer

Intense Violet and Blue Light Emission from Si Nanowires Fabricated Via Solid–liquid–solid Growth from Amorphous Si Films

Single-atom Infrared Emission in Doped Silicon Nanocrystals.