Abstract:Last year, we have reported that the internal quantum efficiency of photoluminescence (PL) from amorphous silicon oxynitride (a-SiNxOy) films has been achieved as high as 60%. The present work intensively investigated the mechanisms for tunable PL in the 2.05-2.95 eV range from our a-SiNx:O films, by using a combination of optical characterizations, X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) measurements. The results of XPS, EPR, and photoluminescence excited measurements indicated that the incorporation of oxygen atoms into silicon nitride (a-SiNx) networks not only reduced the band tail structure disorder (Urbach tail width E-U) but also created N-Si-O (N-x) defect states in the band gap. We have discovered the distinctive PL characteristics from a-SiNx:O films with various NH3/SiH4 ratios. The PL peak energy (E-PL) is independent of the excitation energy (E-exc) and the PL intensity (I-PL) is regardless of the optical band gap (E-opt) but is proportional to the N-x defects concentration, both of which are completely different from the PL characteristics by band tail states recombination mechanism, in which the E-PL is proportional to E-exc (when E-exc <= E-opt) and the I-PL is dependent on the relative position of E-exc and E-opt. Based on the N-Si-O bonding configurations and the distinctive PL characteristics, the radiative recombination mechanism through the N-Si-O defect states has been proposed, by which the performance of stimulated emission may be realized in this kind of a-SiNx:O films. (C) 2015 AIP Publishing LLC.

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