Strong orange–red light emissions from amorphous silicon nitride films grown at high pressures

Rui Huang,Xiang Wang,Jie Song,Yanqing Guo,Honglin Ding,Danqing Wang,Jun Xu,Kunji Chen
DOI: https://doi.org/10.1016/j.scriptamat.2010.01.015
IF: 6.302
2010-01-01
Scripta Materialia
Abstract:We observed very bright orange red light emissions from amorphous silicon nitride prepared under high-pressure deposition conditions. By increasing the pressure from 300 to 700 Pa, the photoluminescence (PL) intensity could be more than doubled. The introduction of N-H bonds is shown to play a key role in enhancing the PL intensity of the films. The improved PL intensity is attributed to the good hydrogen passivation of nonradiative defect states related to N under high growth pressures. Crown Copyright (C) 2010 Published by Elsevier Ltd. on behalf of Acta Materialia Inc. All rights reserved.
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