Abstract:Nitrogen and vacancies were intentionally introduced into Czochralski silicon crystal by doping and neutron irradiation, respectively, to study the effect on oxygen precipitation. A series of isochronal anneals in the temperature range of 700-1150 degrees C revealed that vacancies showed the prominent enhancement effect on oxygen precipitation at temperatures below 1000 degrees C, whereas nitrogen exhibited the evident enhancement in oxygen precipitation at temperatures above 900 degrees C. It is suggested that the vacancies induced by neutron irradiation form VnOm (n, m >= 1) complexes acting as nuclei to facilitate oxygen precipitation in silicon. However, the VnOm complexes are not stable at higher temperatures; thus, the enhancement effect of vacancies on oxygen precipitation decreases evidently as the temperature increases above 1000 degrees C. In addition to the formation of new nuclei based on the VnOm complexes, the growth of grown-in oxygen precipitates is also facilitated by the incorporation of high concentration vacancies in the neutron-irradiated silicon. In nitrogen-doped silicon, the enhanced oxygen precipitation at high temperatures primarily depends on nitrogen concentration rather than vacancy concentration as a result of forming stable N2V2 complexes acting as precipitate nuclei.

Effect of High Temperature–pressure on Nitrogen-Doped Czochralski Silicon

Microstructure of high temperature–pressure treated nitrogen-doped Czochralski silicon

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Defects in Ge-doped Cz-Si Annealed under High Stress

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and P–T Pre-Treatment

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Stress-dependent Transformation of Interstitial Oxygen in Processed Ge-doped Cz-Si

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Investigation of Thermal Donors in Czochralski Silicon Annealed at 450°C under High Pressure of 1Gpa

Micro-characterisation of Si wafers by high-pressure thermopower technique

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Effect of Nitrogen on Oxygen Precipitation in Czochralski Silicon During High-Temperature Annealing

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Nitrogen Effect on Self-Interstitial Generation in Czochralski Silicon Revealed by Gold Diffusion Experiments

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Nitrogen Effect on Hydrogen Penetration into Cz Si During Wet Chemical Etching