Abstract:A dislocation‐free silicon single crystal doped with 1020 cm‐3 germanium (Ge) has been grown using the Czochralski (CZ) growth technique. The Ge concentration in the seed‐end and tang‐end of the crystal was 8×1019cm‐3and 1.6×1020 cm‐3, respectively. The effective segregation coefficient of Ge, the distribution of flow pattern defects (FPDs) and the wafer warpage have been characterized. Both the effective segregation coefficient and the equilibrium segregation coefficient of Ge in silicon were evaluated. Then, the density of FPDs was traced from seed‐end to tang‐end of the ingot, a suppression of FPDs by Ge doping was shown. That is probably because the Ge atoms consume free vacancies and thus a higher density of smaller voids is formed. Furthermore, the mechanical strength of wafers has also been characterized by batch warpage analysis. The warpage in the seed‐end was larger than that in the tang‐end of the ingot, showing that the mechanical strength of wafers is enhanced by Ge doping. Such improvement is interpreted by an enhanced dislocation pinning effect associated with the enhanced nucleation of grown‐in oxygen precipitates in the Ge‐doped silicon wafers. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Defects in Ge-doped Cz-Si Annealed under High Stress

Stress-dependent Transformation of Interstitial Oxygen in Processed Ge-doped Cz-Si

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Effect of High Temperature–pressure on Nitrogen-Doped Czochralski Silicon

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Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

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Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

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High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

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Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Preface of 16th International Conference on Defects, Recognition, Imaging and Physics in Semiconductors

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Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

The Effect of Germanium Doping on Oxygen Donors in Czochralski-Grown Silicon