Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

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Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Flow Pattern Defects in Germanium-Doped Czochralski Silicon Crystals

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Microdefects in Heavily Phosphorus-Doped Czochralski Silicon

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Grown-In Defects in Nitrogen-Doped Czochralski Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Grown-In Oxygen Precipitates in Czochralski Silicon Investigated by Transmission Electron Microscopy

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Effects of Heavy Phosphorus-Doping on Mechanical Properties of Czochralski Silicon

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Defects in Ge-doped Cz-Si Annealed under High Stress

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Oxygen Precipitation in Heavily Phosphorus-Doped Silicon Wafer Annealed at High Temperatures

On the Impact of Heavy Doping on Grown-In Defects in Czochralski-Grown Silicon

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon