Abstract:The effects of germanium (Ge)‐codoping at 1018, 1019, or 1020 cm−3 level on the grown‐in oxide precipitates in 1014 cm−3 level nitrogen (N)‐doped Czochralski (NCZ) silicon have been investigated. It is found that Ge‐codoping enhances the formation of relatively larger grown‐in oxide precipitates. However, such enhancement effect weakens with the increasing Ge‐codoping concentration. On this basis, the effect of 1018 cm−3 level Ge‐codoping on the near‐surface denuded zone (DZ) and bulk microdefects (BMDs) associated with oxygen precipitation in NCZ silicon subjected to an anneal at 1100 °C for 4 h (1100 °C/4 h) has been paid close attention. Moreover, the sustainability of the DZ in the 1100 °C/4 h ‐annealed NCZ silicon subjected to a “copper decoration” or a rigorous oxygen precipitation anneal featuring a prolonged nucleation anneal has been addressed. Thus, it is technologically significant to learn that for the 1100 °C/4 h ‐annealed NCZ silicon, the 1018 cm−3 level Ge‐codoping can remarkably increase the BMD density to better satisfy the requirement of internal gettering (IG) and also ensure the existence of a well‐defined DZ. Finally, the mechanism underlying the effect of Ge‐codoping on the formation of grown‐in oxide precipitates in NCZ silicon has been tentatively elucidated.

Stress-dependent Transformation of Interstitial Oxygen in Processed Ge-doped Cz-Si

Defects in Ge-doped Cz-Si Annealed under High Stress

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Effect of High Temperature–pressure on Nitrogen-Doped Czochralski Silicon

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

The Effect of Germanium Doping on Oxygen Donors in Czochralski-Grown Silicon

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Structure of Ge–O complexes in Czochralski silicon

Germanium-doped Czochralski silicon: Oxygen precipitates and their annealing behavior

Oxygen Precipitation In 10(20) Cm(-3) Germanium-Doped Czochralski Silicon

Oxygen Precipitation in 1020 Cm−3 Germanium-Doped Czochralski Silicon

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Germanium in Czochralski Silicon

Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Germanium Effect on Oxygen Precipitation in Czochralski Silicon

Transmission Electron Microscopy Investigation of Oxygen Precipitation in Czochralski Silicon Annealed under High Pressure

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon