Abstract:For nitrogen-doped Czochralski (NCZ) silicon, it is well known that nitrogen (N) and oxygen (O) impurities can interact to form nitrogen–oxygen shallow thermal donors (N–O STDs); moreover, the N impurities can be involved into heterogeneous nucleation to facilitate the formation of grown-in oxide precipitates. However, how the N impurities participate in the growth of grown-in oxide precipitates during the post-anneal remains unclear. Besides, the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates is yet to be revealed. In this work, the effects of pre-anneals at temperatures of 900–1200 °C on the formation of N–O STDs at 650 °C in NCZ silicon have been first investigated. Thus, it has been found that the more significant growth of grown-in oxide precipitates during the pre-anneal, which consumes much more N impurities, leads to forming much fewer N–O STDs. This finding stimulates us to explore the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates. To this end, the capture of N impurities by the oxide precipitates, on the one hand, and the release of N impurities from the oxide precipitates, on the other hand, have been investigated by two systematically constructed experiments. The obtained results enable us to reasonably propose that the N impurities participating in the growth of grown-in oxide precipitates predominately reside at the oxide precipitate/Si interfaces, which reduces the interfacial energies, thus favoring the growth of grown-in oxide precipitates. Such a viewpoint is well supported by the density functional theory calculations. In a word, this work has gained an insight into the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates, starting from exploring the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates.

Nitrogen Effect on Hydrogen Penetration into Cz Si During Wet Chemical Etching

Study of nitrogen-related defects by means of gold and hydrogen diffusion investigations

Nitrogen Effect on Self-Interstitial Generation in Czochralski Silicon Revealed by Gold Diffusion Experiments

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Effect of Nitrogen on Denuded Zone in Czochralski Silicon Wafer

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Hydrogen Annealing of Grown-In Voids in Nitrogen-Doped Czochralski Grown Silicon

Effect of High Temperature–pressure on Nitrogen-Doped Czochralski Silicon

Nitrogen in Czochralski Silicon

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Participation of Nitrogen Impurities in the Growth of Grown-in Oxide Precipitates in Nitrogen-Doped Czochralski Silicon

Intrinsic gettering of Czochralski silicon annealed in argon and nitrogen atmosphere

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Effect of Hydrogen Anneal on Electric Behavior in NCZ Silicon

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Investigation of Nitrogen Behaviors During Czochralski Silicon Crystal Growth

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure