Abstract:For nitrogen-doped Czochralski (NCZ) silicon, it is well known that nitrogen (N) and oxygen (O) impurities can interact to form nitrogen–oxygen shallow thermal donors (N–O STDs); moreover, the N impurities can be involved into heterogeneous nucleation to facilitate the formation of grown-in oxide precipitates. However, how the N impurities participate in the growth of grown-in oxide precipitates during the post-anneal remains unclear. Besides, the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates is yet to be revealed. In this work, the effects of pre-anneals at temperatures of 900–1200 °C on the formation of N–O STDs at 650 °C in NCZ silicon have been first investigated. Thus, it has been found that the more significant growth of grown-in oxide precipitates during the pre-anneal, which consumes much more N impurities, leads to forming much fewer N–O STDs. This finding stimulates us to explore the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates. To this end, the capture of N impurities by the oxide precipitates, on the one hand, and the release of N impurities from the oxide precipitates, on the other hand, have been investigated by two systematically constructed experiments. The obtained results enable us to reasonably propose that the N impurities participating in the growth of grown-in oxide precipitates predominately reside at the oxide precipitate/Si interfaces, which reduces the interfacial energies, thus favoring the growth of grown-in oxide precipitates. Such a viewpoint is well supported by the density functional theory calculations. In a word, this work has gained an insight into the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates, starting from exploring the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates.

Study of nitrogen-related defects by means of gold and hydrogen diffusion investigations

Nitrogen Effect on Self-Interstitial Generation in Czochralski Silicon Revealed by Gold Diffusion Experiments

Nitrogen Effect on Hydrogen Penetration into Cz Si During Wet Chemical Etching

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Effect of High Temperature–pressure on Nitrogen-Doped Czochralski Silicon

Nitrogen in Czochralski Silicon

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Investigation of Nitrogen Behaviors During Czochralski Silicon Crystal Growth

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Participation of Nitrogen Impurities in the Growth of Grown-in Oxide Precipitates in Nitrogen-Doped Czochralski Silicon

Defects in Ge-doped Cz-Si Annealed under High Stress