Abstract:Due to the excellent mechanical, chemical, and electrical properties of third-generation semiconductor silicon carbide (SiC), pressure sensors utilizing this material might be able to operate in extreme environments with temperatures exceeding 300 °C. However, the significant output drift at elevated temperatures challenges the precision and stability of measurements. Real-time in situ temperature monitoring of the pressure sensor chip is highly important for the accurate compensation of the pressure sensor. In this study, we fabricate platinum (Pt) thin-film resistance temperature detectors (RTDs) on a SiC substrate by incorporating aluminum oxide (Al2O3) as the transition layer and utilizing aluminum nitride (AlN) grooves for alignment through microfabrication techniques. The composite layers strongly adhere to the substrate at temperatures reaching 950 °C, and the interface of the Al2O3/Pt bilayer remains stable at elevated temperatures of approximately 950 °C. This stability contributes to the excellent high-temperature electrical performance of the Pt RTD, enabling it to endure temperatures exceeding 850 °C with good linearity. These characteristics establish a basis for the future integration of Pt RTD in SiC pressure sensors. Furthermore, tests and analyses are conducted on the interfacial diffusion, surface morphological, microstructural, and electrical properties of the Pt films at various annealing temperatures. It can be inferred that the tensile stress and self-diffusion of Pt films lead to the formation of hillocks, ultimately reducing the electrical performance of the Pt thin-film RTD. To increase the upper temperature threshold, steps should be taken to prevent the agglomeration of Pt films.

Micro-characterisation of Si wafers by high-pressure thermopower technique

Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and P–T Pre-Treatment

Effect of High Temperature–pressure on Nitrogen-Doped Czochralski Silicon

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Electrical Characterization of Doped Silicon Using High-Frequency Electromagnetic Waves

Microstructure of high temperature–pressure treated nitrogen-doped Czochralski silicon

Transmission Electron Microscopy Investigation of Oxygen Precipitation in Czochralski Silicon Annealed under High Pressure

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Defects in Ge-doped Cz-Si Annealed under High Stress

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Characterizations on the Doping of Single-Crystal Silicon Carbide

Influence of High Pressure on the Threshold Displacement Energies in Silicon Carbide: A Car–Parrinello Molecular Dynamics Approach

Investigation of Thermal Donors in Czochralski Silicon Annealed at 450°C under High Pressure of 1Gpa

Oxygen Precipitation In Czochralski Silicon Annealed At 450 Degrees C Under A High Pressure Of Gpa

High-temperature piezoresistive pressure sensor based on implantation of oxygen into silicon wafer

Oxygen Precipitation Kinetics of Czochralski Silicon Preannealed under High Pressure

Unraveling the Atomic-Scale Pathways Driving Pressure-Induced Phase Transitions in Silicon

Effect of Substrate Temperature and Pressure on Properties of Micro Crystalline Silicon Films

Pt thin-film resistance thermo detectors with stable interfaces for potential integration in SiC high-temperature pressure sensors