Abstract:In comparison with conventional Czochralski (CZ) silicon, the thermal stability of oxygen precipitation in nitrogen-doped Czochralski (NCZ) silicon has been investigated. After preannealing at 800degreesC and 1000degreesC up to 225 h, the samples were annealed at 1150degreesC, 1200degreesC and 1250degreesC for different time in oxygen, nitrogen and argon atmospheres, respectively. Before and after annealing, oxygen concentration ([O-i]), oxygen precipitates and bulk microdefects (BMDs) density were checked. The results show that oxygen precipitates with higher density and smaller size generated in the NCZ silicon during preannealing. After subsequent annealing at higher temperature, most of oxygen precipitates in the NCZ silicon dissolved and [O-i] increased largely. It was also found that oxygen atmosphere could enhance the elimination of oxygen precipitates in the NCZ silicon. Furthermore, with increasing annealing temperature, more oxygen precipitates could dissolve. It is considered that oxygen precipitates in NCZ silicon is hard to eliminate completely during annealing at high temperature.

Oxygen Precipitation In Czochralski Silicon Annealed At 450 Degrees C Under A High Pressure Of Gpa

Transmission Electron Microscopy Investigation of Oxygen Precipitation in Czochralski Silicon Annealed under High Pressure

Oxygen Precipitation Kinetics of Czochralski Silicon Preannealed under High Pressure

Oxygen Precipitation in Czochralski Silicon: Effect of Ramped Anneal from 300To750°c

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Influence of High Pressure Heat Treatment on Nucleation of Oxygen Precipitation at Low Temperature in CZ Silicon

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

The Annealing Behavior of Oxygen in Cast Multicrystalline Silicon

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Effect of Nitrogen on Oxygen Precipitation in Czochralski Silicon During High-Temperature Annealing

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Oxygen Precipitation in Heavily Phosphorus-Doped Silicon Wafer Annealed at High Temperatures

Influences of Oxygen Precipitation on Vickers Hardness of Czochralski Silicon

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon

Oxygen Annealing Behavior in Multicrystalline Silicon