Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon
DR Yang,HJ Wang,XG Yu,XY Ma,DL Que
DOI: https://doi.org/10.4028/www.scientific.net/ssp.95-96.111
2004-01-01
Abstract:In comparison with conventional Czochralski (CZ) silicon, the thermal stability of oxygen precipitation in nitrogen-doped Czochralski (NCZ) silicon has been investigated. After preannealing at 800degreesC and 1000degreesC up to 225 h, the samples were annealed at 1150degreesC, 1200degreesC and 1250degreesC for different time in oxygen, nitrogen and argon atmospheres, respectively. Before and after annealing, oxygen concentration ([O-i]), oxygen precipitates and bulk microdefects (BMDs) density were checked. The results show that oxygen precipitates with higher density and smaller size generated in the NCZ silicon during preannealing. After subsequent annealing at higher temperature, most of oxygen precipitates in the NCZ silicon dissolved and [O-i] increased largely. It was also found that oxygen atmosphere could enhance the elimination of oxygen precipitates in the NCZ silicon. Furthermore, with increasing annealing temperature, more oxygen precipitates could dissolve. It is considered that oxygen precipitates in NCZ silicon is hard to eliminate completely during annealing at high temperature.