Abstract:The influence of nickel precipitation on the formation of denuded zone (DZ) in Czochralski silicon (Cz Si) was systematically investigated by means of Scanning Infrared Microscopy (SIRM) and optical microscopy (OM). It was found that, for conventional high-low-high annealing (CFA), the DZ can be obtained in all specimens contaminated by nickel impurity at different steps of the heat treatment, indicating that no nickel precipitates generated in the region just below the surface. Additionally, the width of the DZ is nearly the same in all specimens although the contamination sequence is different, indicating that the contamination temperature, that is, the corresponding equilibrium concentration of interstitial nickel in the silicon doesn’t influence significantly the thermodynamics and kinetics process of the formation of nickel precipitates. For Rapid thermal annealing (RTA)-low-high annealing, the tendency remained unchanged. On the basis of the experimental results, it is supposed that the formation of DZ is strongly influenced by the segregation gettering and intrinsic gettering of the nickel atoms, which were caused by the formation of nickel-silicon (Ni–Si) alloys close to the surface, oxygen precipitates and extended defects in the bulk, respectively.

Oxygen Precipitation Kinetics of Czochralski Silicon Preannealed under High Pressure

Oxygen Precipitation In Czochralski Silicon Annealed At 450 Degrees C Under A High Pressure Of Gpa

Transmission Electron Microscopy Investigation of Oxygen Precipitation in Czochralski Silicon Annealed under High Pressure

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Oxygen Precipitation in Czochralski Silicon: Effect of Ramped Anneal from 300To750°c

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

The Advance of Research on Oxygen Precipitates in NCZ Silicon

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Effect of Annealing Atmosphere on Oxygen Precipitation and Formation of Denuded Zone in Czochralski Silicon Wafer

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Oxygen Precipitation Within Denuded Zone Founded by Rapid Thermal Processing in Czochralski Silicon Wafers