Abstract:Si nanocrystals embedded in thermally grown SiO2 have been annealed at temperatures between 400 and 900 °C in a variety of atmospheres. Positron annihilation spectroscopy has been employed to study changes in the interface regions between nanocrystalline Si (nc-Si) and SiO2 with the support of photoluminescence measurements. We find that nitrogen and oxygen are trapped in the voids around nc-Si at low annealing temperatures. High-temperature annealing during the formation of nc-Si causes hydrogen originally residing in the SiO2/substrate region to enter the SiO2 structure. Hydrogen diffuse back to the SiO2/substrate region on annealing in vacuum at 400 °C because no other impurities block its diffusion channels. At annealing temperatures above 700 °C, both nitrogen and oxygen react with nc-Si, resulting in a volume increase. This introduces stress in the SiO2 matrix, which is relaxed by the shrinkage of its intrinsic open volume. The present data suggest that nitrogen suppresses Si diffusion in SiO2, so that the agglomeration of nc-Si is slower during annealing in nitrogen than in oxygen or vacuum.

Oxygen Annealing Behavior in Multicrystalline Silicon

The Annealing Behavior of Oxygen in Cast Multicrystalline Silicon

Oxygen in Czochralski Silicon Used for Solar Cells

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Oxygen Precipitation in Czochralski Silicon: Effect of Ramped Anneal from 300To750°c

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Effect of Heat Treatment on Carbon in Multicrystalline Silicon

Effect of carbon on oxygen precipitation in Czochralski silicon for solar cells

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Oxygen precipitation in N-doped silicon monocrystal

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

Oxygen-related Centers in Multicrystalline Silicon

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon