Abstract:In comparison with conventional Czochralski (CZ) silicon, the thermal stability of oxygen precipitation in nitrogen-doped Czochralski (NCZ) silicon has been investigated. After preannealing at 800degreesC and 1000degreesC up to 225 h, the samples were annealed at 1150degreesC, 1200degreesC and 1250degreesC for different time in oxygen, nitrogen and argon atmospheres, respectively. Before and after annealing, oxygen concentration ([O-i]), oxygen precipitates and bulk microdefects (BMDs) density were checked. The results show that oxygen precipitates with higher density and smaller size generated in the NCZ silicon during preannealing. After subsequent annealing at higher temperature, most of oxygen precipitates in the NCZ silicon dissolved and [O-i] increased largely. It was also found that oxygen atmosphere could enhance the elimination of oxygen precipitates in the NCZ silicon. Furthermore, with increasing annealing temperature, more oxygen precipitates could dissolve. It is considered that oxygen precipitates in NCZ silicon is hard to eliminate completely during annealing at high temperature.

Oxygen in Czochralski Silicon Used for Solar Cells

Oxygen Annealing Behavior in Multicrystalline Silicon

Effect of carbon on oxygen precipitation in Czochralski silicon for solar cells

Oxygen Precipitation in Czochralski Silicon: Effect of Ramped Anneal from 300To750°c

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Effect of Oxygen Precipitation on the Performance of Czochralski Silicon Solar Cells

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

The Annealing Behavior of Oxygen in Cast Multicrystalline Silicon

Investigation of Oxygen Precipitation Behavior in Nitrogen-doped Czochralski Silicon Used for Solar Cells

Oxygen Precipitation In Czochralski Silicon Annealed At 450 Degrees C Under A High Pressure Of Gpa

Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon

Dissolution of Oxygen Precipitates in Germanium-Doped Czochralski Silicon During Rapid Thermal Annealing

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon