Abstract:Ab initio methods based on density functional theory are employed to investigate the bonding of oxygen (O) at the oxide/nanocrystal (NC) interface after hydrogen (H)-passivated silicon (Si) NCs are oxidized. Besides the well-known quantum confinement effect, the type of O bonding and the oxidation state of Si at the oxide/NC interface are found to significantly affect the optical properties of oxidized Si NCs. After oxidation, the excitation energies of Si-35 and Si-66 increase, while those of Si-87 and Si-123 decrease. We show that oxidation-induced redshifts in the light emission from Si NCs do not always result from defective O such as doubly bonded O at the oxide/NC interface. When Si atoms at the oxide/NC interface are mainly in low oxidation states, backbond O at the interface per se results in the redshifts in the light emission from Si NCs. When Si atoms at the oxide/NC interface are mainly in high oxidation states. Si3+=O at the interface leads to the redshifts in the light emission from Si NCs. It is found that for Si NCs with perfect oxide/NC interface (i.e., O at the interface is all backbond O) the seriously weakened next-nearest-neighboring Si Si of Si3+ readily breaks after excitation. At the oxide/NC interface. Si2+=O induced strong electronic localization and Si2+=O and Si3+=O induced reduction of interface polarization stabilize the geometry of oxidized Si NCs at the excited state. The electronic localization of severely stressed bridge O at the oxide/NC interface is relatively weak. This facilitates the breaking of nearest-neighboring Si Si at the oxide/NC interface as oxidized Si NCs are excited.

Oxygen-related Centers in Multicrystalline Silicon

Oxygen Annealing Behavior in Multicrystalline Silicon

The Annealing Behavior of Oxygen in Cast Multicrystalline Silicon

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Effect of oxygen concentration on minority carrier lifetime at the bottom of quasi-single crystalline silicon

A Model for Distribution of Oxygen in Multicrystalline Silicon Ingot Grown by Directional Solidification

Oxygen Diffusion in Silicon: The Influence of Hydrogen

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Grown-In Oxygen Precipitates in Czochralski Silicon Investigated by Transmission Electron Microscopy

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Study on the oxygen concentration reduction in heavily Sb-doped silicon

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Reduction of oxygen during the crystal growth in heavily antimony-doped Czochralski silicon

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study