Abstract:Oxygen is the major impurity in single-crystal silicon rod derived from the growth of large-diameter n-type Czochralski (Cz) silicon, which could exert severe affects on the cell efficiency of monocrystalline silicon wafer. Reducing the concentration of oxygen in the silicon crystal could significantly improve the wafer cell efficiency. In the current work, a 2D global quasi-steady-state axisymmetric model was established based on the n-type 252 mm diameter single-crystal silicon growth process. Moreover, the effect of different heater structures on the concentration of oxygen in the hot zone, the crystal and the melt of the Cz furnace was investigated by the finite element method (FVM). It was found that the heater power was decreased by 2.22 kW after increasing the heater height from 210 mm to 300 mm. However, the average temperature of the quartz crucible was increased by 4.72 K, which contributes to the increase in the concentration of oxygen in the center of the wafer at the head of the single crystal silicon rod by 0.39 ppma. This demonstrates that increasing the heater height facilitates the reduction of the heater power consumption, but increases the oxygen concentration in the center of the wafer at the head of the monocrystalline silicon rods. The method of reducing the radiating area of the heater by increasing the slot depth was employed to reduce the heater power by 1.07 kW when adopting a heater structure with a height of 260 mm, an upper slot depth of 200 mm, and a bottom slot depth of 200 mm. The oxygen concentration of silicon wafers, which was detected by Fourier transform infrared spectroscopy, demonstrates that the oxygen concentration in the center of the head wafer was reduced by 1.324 ppma, and the average oxygen concentration of the head wafers reduced by 0.66 ppma. This study provides a theoretical basis for the design of oxygen-reducing heaters, which could be applied for the production of M10-size monocrystalline silicon wafers.

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Control of oxygen transport in the melt of a czochralski-silicon crystal growth

Effects of Melt Depth on Oxygen Transport in Silicon Crystal Growth by Continuous-Feeding Czochralski Method

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Reduction of oxygen during the crystal growth in heavily antimony-doped Czochralski silicon

Turbulent transport of oxygen in the Czochralski growth of large silicon crystals

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Oxygen Diffusion in Silicon: The Influence of Hydrogen

The Effect of Impurity-Induced Lattice Strain and Fermi Level Position on Low Temperature Oxygen Diffusion in Silicon

Effect of Heater Structure on Oxygen Concentration in Large Diameter N-Type Czochralski Silicon Study Using Numerical Simulation

Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer

Effects of different cusp magnetic ratios and crucible rotation conditions on oxygen transport and point defect formation during Cz silicon crystal growth

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes

Numerical Investigation of the Effect of Rotation on the Oscillatory Thermocapillary Convection and Dopant Transport in a Silicon Liquid Bridge

Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth by optimized heating zone with dual side-heaters

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing