Abstract:Oxygen diffusion in silicon is known to be affected by high concentrations of impurities, although the mechanism underpinning this is poorly understood. We have studied oxygen transport in Czochralski silicon by analyzing data on the locking of dislocations by oxygen as a function of time and temperature. In this paper, we present new data from crystals grown to contain high levels of germanium and arsenic. We analyze these new data, together with our previous data for silicon with a high boron concentration, to further the understanding of the mechanism by which high impurity concentrations affect oxygen transport at temperatures at which the oxygen dimer dominates transport (up to 550 °C). Our results show that a high level of boron doping (∼3 × 1018cm−3) enhances the effective diffusivity of oxygen by a factor of ∼8 to ∼25 relative to low doped material with the same oxygen concentration. High levels of germanium doping (∼8 × 1019cm−3) and arsenic doping (∼2 × 1019cm−3) can both have a slight retardation effect on oxygen transport. The magnitude of the reduction measured is less than a factor of ∼4 in the heavily germanium doped specimens and less than a factor of ∼5 in the heavily arsenic doped specimens, and in most cases is significantly less than this. Germanium doping introduces considerable strain into the silicon lattice without affecting the Fermi level position, so data from these samples show that lattice strain affects oxygen dimer transport. The arsenic and boron doping levels in the materials studied give rise to lattice strain with a smaller magnitude and opposite sign to that in the germanium doped samples. It is therefore suggested that the Fermi level position also affects the transport of oxygen dimers.

Oxygen Diffusion in Silicon: The Influence of Hydrogen

Early Stages of Oxygen Precipitation in Silicon

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

The Effect of Impurity-Induced Lattice Strain and Fermi Level Position on Low Temperature Oxygen Diffusion in Silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Study of Oxygen Diffusion and Clustering in Silicon using an Empirical Interatomic Potential

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Oxygen Annealing Behavior in Multicrystalline Silicon

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

The Annealing Behavior of Oxygen in Cast Multicrystalline Silicon

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Deciphering mechanisms of enhanced-retarded oxygen diffusion in doped Si

Oxygen-related Centers in Multicrystalline Silicon

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

The Advance of Research on Oxygen Precipitates in NCZ Silicon

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping