Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

Deciphering mechanisms of enhanced-retarded oxygen diffusion in doped Si

The Effect of Impurity-Induced Lattice Strain and Fermi Level Position on Low Temperature Oxygen Diffusion in Silicon

Retarded Oxygen Diffusion in Heavily Phosphorus-Doped Czochralski Silicon: Experiments and First-Principles Calculations

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Ab Initio Study On The Effect Of Structural Relaxation On The Electronic And Optical Properties Of P-Doped Si Nanocrystals

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Oxygen Diffusion in Silicon: The Influence of Hydrogen

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Study on the oxygen concentration reduction in heavily Sb-doped silicon

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Density Functional Theory Study Of The Impact Of Tin Doping On Oxygen Diffusion In Czochralski Silicon

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Oxygen Precipitation and Induced Defects in Heavily Doped Czochralski Silicon

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

On the Mechanism of Oxygen-Content Reduction by Antimony Doping of Czochralski Silicon Melts

Impurity Doping In Sio2: Formation Energies And Defect Levels From First-Principles Calculations