Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

Retarded Oxygen Diffusion in Heavily Phosphorus-Doped Czochralski Silicon: Experiments and First-Principles Calculations

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Effects of Heavy Phosphorus-Doping on Mechanical Properties of Czochralski Silicon

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Deciphering mechanisms of enhanced-retarded oxygen diffusion in doped Si

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Oxygen Precipitation in Heavily Phosphorus-Doped Silicon Wafer Annealed at High Temperatures

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Oxygen Precipitation and Induced Defects in Heavily Doped Czochralski Silicon

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

The Effect of Impurity-Induced Lattice Strain and Fermi Level Position on Low Temperature Oxygen Diffusion in Silicon

Oxygen Precipitation Heterogeneously Nucleating on Silicon Phosphide Precipitates in Heavily Phosphorus-Doped Czochralski Silicon

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction