Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Progress in Study of Oxygen-Related Defects in Electron Irradiated CZ-Si

Positron lifetime and coincidence Doppler broadening study of vacancy-oxygen complexes in Si: experiments and first-principles calculations

Identification of Vacancy-Oxygen Complexes in Si by Coincidence Doppler Broadening of Positron Annihilation Radiation and First-Principles Calculations

Gettering of Oxygen Onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Precipitates and Defects in Silicon Co-Implanted with Helium and Oxygen

Effects of Helium and Oxygen Common Implantation in Silicon Wafer

Defect States in Carbon and Oxygen Implanted P-Type Silicon

The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy

Effect of Vacancies on Oxygen Precipitation in Germanium-Doped Czochralski Silicon

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Study Of He-Induced Nano-Cavities As Sinks Of Oxygen For Forming Silicon-On-Insulator

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

Evolution of secondary defects in arsenic implanted Si

Vacancy-type Defects in Large-Dose Neutron-Irradiated Silicon Containing Hydrogen

PHOTOLUMINESCENCE STUDY OF DEFECTS IN SI+ ION IMPLANTED THERMAL SIO2 FILMS

Growth and Ripening of Oxygen Precipitation in Neutron-Irradiated Czochralski Silicon