Abstract:Oxygen diffusion in silicon is known to be affected by high concentrations of impurities, although the mechanism underpinning this is poorly understood. We have studied oxygen transport in Czochralski silicon by analyzing data on the locking of dislocations by oxygen as a function of time and temperature. In this paper, we present new data from crystals grown to contain high levels of germanium and arsenic. We analyze these new data, together with our previous data for silicon with a high boron concentration, to further the understanding of the mechanism by which high impurity concentrations affect oxygen transport at temperatures at which the oxygen dimer dominates transport (up to 550 °C). Our results show that a high level of boron doping (∼3 × 1018cm−3) enhances the effective diffusivity of oxygen by a factor of ∼8 to ∼25 relative to low doped material with the same oxygen concentration. High levels of germanium doping (∼8 × 1019cm−3) and arsenic doping (∼2 × 1019cm−3) can both have a slight retardation effect on oxygen transport. The magnitude of the reduction measured is less than a factor of ∼4 in the heavily germanium doped specimens and less than a factor of ∼5 in the heavily arsenic doped specimens, and in most cases is significantly less than this. Germanium doping introduces considerable strain into the silicon lattice without affecting the Fermi level position, so data from these samples show that lattice strain affects oxygen dimer transport. The arsenic and boron doping levels in the materials studied give rise to lattice strain with a smaller magnitude and opposite sign to that in the germanium doped samples. It is therefore suggested that the Fermi level position also affects the transport of oxygen dimers.

Effect of oxygen concentration on minority carrier lifetime at the bottom of quasi-single crystalline silicon

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

On the Low Carrier Lifetime Edge Zone in Multicrystalline Silicon Ingots

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

THE IMPACT OF IMPURITIES ON MINORITY CARRIER LIFETIME OF MULTICRYSTALLINE SILICON

The Annealing Behavior of Oxygen in Cast Multicrystalline Silicon

Influence of Defects and Impurities on the Deteriorated Border Region in Multicrystalline Silicon Ingots

Effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon

Effects of metal impurities at the edges of cast Si ingot on crystal quality and solar cell performance

Relationship Between Minority Carrier Life and Morphology with Luminescent Properties in Porous Silicon

Effect of Cooling Rate during Thermal Processes on the Electrical Properties of Cast Multi-Crystalline Silicon

Minority Carrier Lifetime of Thermal Oxide Passivated CZ Si Wafers

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

Oxygen-related Centers in Multicrystalline Silicon

The Effect of Impurity-Induced Lattice Strain and Fermi Level Position on Low Temperature Oxygen Diffusion in Silicon

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Effects of impurity barrier layer on the red zone at the bottom of cast monocrystalline Si ingot for solar cells

Oxygen Annealing Behavior in Multicrystalline Silicon

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C