Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Effects of impurity barrier layer on the red zone at the bottom of cast monocrystalline Si ingot for solar cells

Effects of metal impurities at the edges of cast Si ingot on crystal quality and solar cell performance

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Improving quality of cast monocrystalline Si ingot with seed crystal strips and graphite soft felt

Effect of oxygen concentration on minority carrier lifetime at the bottom of quasi-single crystalline silicon

Higher Quality Mono-Like Cast Silicon with Induced Grain Boundaries

(Invited) Defects in Cast-Mono Crystalline Silicon

Improve Solar Cell Performance of High-Performance Multicrystalline Silicon Seeded with Low-Cost Compact Nucleation Layer

Growth of low-cost and high-quality monocrystalline silicon ingots by using split recycled seeds

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

Purification of solar grade silicon using electromagnetic field

Designing Functional Σ13 Grain Boundaries at Seed Junctions for High-Quality Cast Quasi-Single Crystalline Silicon

Iron Contamination in Cast Quasi-Single Crystalline Silicon Ingots

Seed-assisted Cast Quasi-Single Crystalline Silicon for Photovoltaic Application: Towards High Efficiency and Low Cost Silicon Solar Cells

Higher quality composite silicon ingot with monocrystalline and multicrystalline bricks

Recycling of silicon scraps by electron beam melting coupled with directional solidification and its mechanism of impurity removal

Preparation of High-performance Multicrystalline Silicon Ingot Based on Innovative Seeding Strategy for Recycled Seeds

Reducing parasitic absorption and recombination losses in silicon solar cells through transition metal doped glass frit

Effect of Subgrains on the Performance of Mono-Like Crystalline Silicon Solar Cells

Grain Boundary Engineering of High Performance Multicrystalline Silicon: Control of Iron Contamination at the Ingot Edge

Low-cost solar grade silicon purification process with Al–Si system using a powder metallurgy technique